Magnetic anisotropy of GaMnAs film and its application in multi-valued memory devices

Sang Hoon Lee, Taehee Yoo, Hakjoon Lee, Sungwon Khym, Xinyu Liu, Jacek K. Furdyna

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The magnetic anisotropy of GaMnAs ferromagnetic semiconductor film was investigated by magneto-transport measurements. Values of cubic and uniaxial anisotropies were obtained by analyzing the angular dependences of Hall effects based on magnetic free energy. The presence of strong cubic anisotropy gave four magnetic easy axes in the film's plane, resulting in two-step switching behavior in field scans of the planar Hall effect. Asymmetric loops containing four resistance plateaus were observed in minor scans of the planar Hall effect owing to the formation of stable multi-domain structures during magnetization reversal. Four-valued memory function based on the four observed Hall resistance states was demonstrated by using appropriate sequences of magnetic field pulses.

Original languageEnglish
Article number04DM02
JournalJapanese Journal of Applied Physics
Volume50
Issue number4 PART 2
DOIs
Publication statusPublished - 2011 Apr 1

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Magnetic anisotropy
Hall effect
Data storage equipment
anisotropy
Anisotropy
Magnetization reversal
Hall resistance
Free energy
plateaus
free energy
Semiconductor materials
Magnetic fields
magnetization
pulses
magnetic fields

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Magnetic anisotropy of GaMnAs film and its application in multi-valued memory devices. / Lee, Sang Hoon; Yoo, Taehee; Lee, Hakjoon; Khym, Sungwon; Liu, Xinyu; Furdyna, Jacek K.

In: Japanese Journal of Applied Physics, Vol. 50, No. 4 PART 2, 04DM02, 01.04.2011.

Research output: Contribution to journalArticle

Lee, Sang Hoon ; Yoo, Taehee ; Lee, Hakjoon ; Khym, Sungwon ; Liu, Xinyu ; Furdyna, Jacek K. / Magnetic anisotropy of GaMnAs film and its application in multi-valued memory devices. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 4 PART 2.
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