Abstract
The magnetic anisotropy of GaMnAs ferromagnetic semiconductor film was investigated by magneto-transport measurements. Values of cubic and uniaxial anisotropies were obtained by analyzing the angular dependences of Hall effects based on magnetic free energy. The presence of strong cubic anisotropy gave four magnetic easy axes in the film's plane, resulting in two-step switching behavior in field scans of the planar Hall effect. Asymmetric loops containing four resistance plateaus were observed in minor scans of the planar Hall effect owing to the formation of stable multi-domain structures during magnetization reversal. Four-valued memory function based on the four observed Hall resistance states was demonstrated by using appropriate sequences of magnetic field pulses.
| Original language | English |
|---|---|
| Article number | 04DM02 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 50 |
| Issue number | 4 PART 2 |
| DOIs | |
| Publication status | Published - 2011 Apr 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Magnetic anisotropy of GaMnAs film and its application in multi-valued memory devices. / Lee, Sang Hoon; Yoo, Taehee; Lee, Hakjoon; Khym, Sungwon; Liu, Xinyu; Furdyna, Jacek K.
In: Japanese Journal of Applied Physics, Vol. 50, No. 4 PART 2, 04DM02, 01.04.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Magnetic anisotropy of GaMnAs film and its application in multi-valued memory devices
AU - Lee, Sang Hoon
AU - Yoo, Taehee
AU - Lee, Hakjoon
AU - Khym, Sungwon
AU - Liu, Xinyu
AU - Furdyna, Jacek K.
PY - 2011/4/1
Y1 - 2011/4/1
N2 - The magnetic anisotropy of GaMnAs ferromagnetic semiconductor film was investigated by magneto-transport measurements. Values of cubic and uniaxial anisotropies were obtained by analyzing the angular dependences of Hall effects based on magnetic free energy. The presence of strong cubic anisotropy gave four magnetic easy axes in the film's plane, resulting in two-step switching behavior in field scans of the planar Hall effect. Asymmetric loops containing four resistance plateaus were observed in minor scans of the planar Hall effect owing to the formation of stable multi-domain structures during magnetization reversal. Four-valued memory function based on the four observed Hall resistance states was demonstrated by using appropriate sequences of magnetic field pulses.
AB - The magnetic anisotropy of GaMnAs ferromagnetic semiconductor film was investigated by magneto-transport measurements. Values of cubic and uniaxial anisotropies were obtained by analyzing the angular dependences of Hall effects based on magnetic free energy. The presence of strong cubic anisotropy gave four magnetic easy axes in the film's plane, resulting in two-step switching behavior in field scans of the planar Hall effect. Asymmetric loops containing four resistance plateaus were observed in minor scans of the planar Hall effect owing to the formation of stable multi-domain structures during magnetization reversal. Four-valued memory function based on the four observed Hall resistance states was demonstrated by using appropriate sequences of magnetic field pulses.
UR - http://www.scopus.com/inward/record.url?scp=79955412533&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955412533&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.04DM02
DO - 10.1143/JJAP.50.04DM02
M3 - Article
AN - SCOPUS:79955412533
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04DM02
ER -