Magnetic dead layer in amorphous CoFeB layers with various top and bottom structures

Soo Young Jang, Sang Ho Lim, Seong Rae Lee

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30 Citations (Scopus)

Abstract

The magnetic dead layer (MDL) in amorphous CoFeB layers is investigated for four different unit structures. These structures are relevant to the synthetic ferrimagnetic (SyF) free layer structure in magnetic tunnel junctions used for high density magnetic random access memory (MRAM). The MDL results for these unit structures are then converted to those for the constituent interfaces of the SyF free layer structure. These MDL results are critically tested by fabricating the synthetic ferrimagnetic free layer structures with various thickness asymmetries. The observed switching properties of these tested structures are in good agreement with those expected from the effective thicknesses after the MDL correction, confirming the accuracy of the present results for the MDLs at the constituent interfaces.

Original languageEnglish
JournalJournal of Applied Physics
Volume107
Issue number9
DOIs
Publication statusPublished - 2010 May 1

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random access memory
tunnel junctions
asymmetry

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Magnetic dead layer in amorphous CoFeB layers with various top and bottom structures. / Jang, Soo Young; Lim, Sang Ho; Lee, Seong Rae.

In: Journal of Applied Physics, Vol. 107, No. 9, 01.05.2010.

Research output: Contribution to journalArticle

@article{93fcc686974a432fbf8df59437b9d478,
title = "Magnetic dead layer in amorphous CoFeB layers with various top and bottom structures",
abstract = "The magnetic dead layer (MDL) in amorphous CoFeB layers is investigated for four different unit structures. These structures are relevant to the synthetic ferrimagnetic (SyF) free layer structure in magnetic tunnel junctions used for high density magnetic random access memory (MRAM). The MDL results for these unit structures are then converted to those for the constituent interfaces of the SyF free layer structure. These MDL results are critically tested by fabricating the synthetic ferrimagnetic free layer structures with various thickness asymmetries. The observed switching properties of these tested structures are in good agreement with those expected from the effective thicknesses after the MDL correction, confirming the accuracy of the present results for the MDLs at the constituent interfaces.",
author = "Jang, {Soo Young} and Lim, {Sang Ho} and Lee, {Seong Rae}",
year = "2010",
month = "5",
day = "1",
doi = "10.1063/1.3355992",
language = "English",
volume = "107",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Magnetic dead layer in amorphous CoFeB layers with various top and bottom structures

AU - Jang, Soo Young

AU - Lim, Sang Ho

AU - Lee, Seong Rae

PY - 2010/5/1

Y1 - 2010/5/1

N2 - The magnetic dead layer (MDL) in amorphous CoFeB layers is investigated for four different unit structures. These structures are relevant to the synthetic ferrimagnetic (SyF) free layer structure in magnetic tunnel junctions used for high density magnetic random access memory (MRAM). The MDL results for these unit structures are then converted to those for the constituent interfaces of the SyF free layer structure. These MDL results are critically tested by fabricating the synthetic ferrimagnetic free layer structures with various thickness asymmetries. The observed switching properties of these tested structures are in good agreement with those expected from the effective thicknesses after the MDL correction, confirming the accuracy of the present results for the MDLs at the constituent interfaces.

AB - The magnetic dead layer (MDL) in amorphous CoFeB layers is investigated for four different unit structures. These structures are relevant to the synthetic ferrimagnetic (SyF) free layer structure in magnetic tunnel junctions used for high density magnetic random access memory (MRAM). The MDL results for these unit structures are then converted to those for the constituent interfaces of the SyF free layer structure. These MDL results are critically tested by fabricating the synthetic ferrimagnetic free layer structures with various thickness asymmetries. The observed switching properties of these tested structures are in good agreement with those expected from the effective thicknesses after the MDL correction, confirming the accuracy of the present results for the MDLs at the constituent interfaces.

UR - http://www.scopus.com/inward/record.url?scp=85024793053&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85024793053&partnerID=8YFLogxK

U2 - 10.1063/1.3355992

DO - 10.1063/1.3355992

M3 - Article

AN - SCOPUS:85024793053

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -