TY - JOUR
T1 - Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches
AU - Noh, Su Jung
AU - Miyamoto, Yasuyoshi
AU - Hayashi, Naoto
AU - Lee, Ji Sung
AU - Kim, Young Keun
N1 - Funding Information:
This work was supported by the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (no. 2011-0016497 ). SJN is grateful for the BK21 Global Internship program (no. T1100141 ) sponsored by National Research Foundation of Korea.
Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012/6
Y1 - 2012/6
N2 - Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I-V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger.
AB - Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I-V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger.
KW - C. Notched magnetic nanowire
KW - D. Domain wall motion
KW - E. Differential resistance
KW - E. Micromagnetic simulation
UR - http://www.scopus.com/inward/record.url?scp=84860710384&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84860710384&partnerID=8YFLogxK
U2 - 10.1016/j.ssc.2012.03.004
DO - 10.1016/j.ssc.2012.03.004
M3 - Article
AN - SCOPUS:84860710384
VL - 152
SP - 1004
EP - 1007
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 12
ER -