Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches

Su Jung Noh; Yasuyoshi Miyamoto; Naoto Hayashi; Ji Sung Lee; Young Keun Kim

doi:10.1016/j.ssc.2012.03.004

Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches

Su Jung Noh, Yasuyoshi Miyamoto, Naoto Hayashi, Ji Sung Lee, Young Keun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

Abstract

Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I-V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger.

Original language	English
Pages (from-to)	1004-1007
Number of pages	4
Journal	Solid State Communications
Volume	152
Issue number	12
DOIs	https://doi.org/10.1016/j.ssc.2012.03.004
Publication status	Published - 2012 Jun

Keywords

C. Notched magnetic nanowire
D. Domain wall motion
E. Differential resistance
E. Micromagnetic simulation

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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Noh, S. J., Miyamoto, Y., Hayashi, N., Lee, J. S., & Kim, Y. K. (2012). Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches. Solid State Communications, 152(12), 1004-1007. https://doi.org/10.1016/j.ssc.2012.03.004

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AU - Lee, Ji Sung

AU - Kim, Young Keun

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AB - Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I-V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger.

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KW - E. Micromagnetic simulation

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