Magnetic properties of n-GaMnN thin films

G. T. Thaler, M. E. Overberg, B. Gila, R. Frazier, C. R. Abernathy, S. J. Pearton, J. S. Lee, S. Y. Lee, Y. D. Park, Z. G. Khim, J. Kim, F. Ren

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GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at.% were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance-voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a TC above room temperature.

Original languageEnglish
Pages (from-to)3964-3966
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2002 May 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Thaler, G. T., Overberg, M. E., Gila, B., Frazier, R., Abernathy, C. R., Pearton, S. J., Lee, J. S., Lee, S. Y., Park, Y. D., Khim, Z. G., Kim, J., & Ren, F. (2002). Magnetic properties of n-GaMnN thin films. Applied Physics Letters, 80(21), 3964-3966.