Magnetic skyrmion field-effect transistors

Ik Sun Hong, Kyoung Jin Lee

Research output: Contribution to journalArticle

Abstract

Magnetic skyrmions are of considerable interest for low-power memory and logic devices because of high speed at low current and high stability due to topological protection. We propose a skyrmion field-effect transistor based on a gate-controlled Dzyaloshinskii-Moriya interaction. A key working principle of the proposed skyrmion field-effect transistor is a large transverse motion of skyrmions, caused by an effective equilibrium dampinglike spin-orbit torque due to spatially inhomogeneous Dzyaloshinskii-Moriya interaction. This large transverse motion can be categorized as the skyrmion Hall effect but has been unrecognized previously. The proposed device is capable of performing multibit operation and Boolean functions and thus is expected to serve as a low-power logic device based on magnetic solitons.

Original languageEnglish
Article number072406
JournalApplied Physics Letters
Volume115
Issue number7
DOIs
Publication statusPublished - 2019 Aug 12

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field effect transistors
logic
magnetic fields
Boolean functions
low currents
Hall effect
torque
solitary waves
high speed
interactions
orbits

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Magnetic skyrmion field-effect transistors. / Hong, Ik Sun; Lee, Kyoung Jin.

In: Applied Physics Letters, Vol. 115, No. 7, 072406, 12.08.2019.

Research output: Contribution to journalArticle

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