Abstract
Magnetic properties of electrodeposited CoNiFeS films were studied to seek their feasibility for applications in microelectromagnetic devices such as high areal density recording heads. We started with NiFe and then expanded experiments to a CoNiFe system. Finally, we added a fourth element, sulfur, to further improve physical properties. A small amount of sulfur inclusion has induced grain size refinement and offered magnetic softness to the film accompanying with increased electrical resistivity. Grain size was found to be in the order of 10 nm. Co73Ni17Fe9S1 (in wt. %) films with thickness of 2.5 μm exhibit superior properties compared with currently utilized Ni45Fe55: high saturation magnetic flux density (Bs∼17 kG), low coercivity (Hc∼0.4 Oe), near zero saturation magnetostriction (λs∼1.0×10-6), high permeability (μ∼1300 at 100 MHz), and high electrical resistivity (ρ∼55 μΩ cm). From a processing standpoint, we were able to control film thickness uniformity by adjusting current distributions between the auxiliary electrode and cathode across 100 mm wafers.
| Original language | English |
|---|---|
| Pages (from-to) | 5413-5415 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 87 |
| Issue number | 9 II |
| Publication status | Published - 2000 May 1 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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Magnetically soft and electrically resistive CoNiFeS alloy films prepared by electrodeposition. / Kim, Young-geun; Son, Hee Young; Choi, Young Sik; Moon, Ki Seok; Sunwoo, Kuk Hyun.
In: Journal of Applied Physics, Vol. 87, No. 9 II, 01.05.2000, p. 5413-5415.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Magnetically soft and electrically resistive CoNiFeS alloy films prepared by electrodeposition
AU - Kim, Young-geun
AU - Son, Hee Young
AU - Choi, Young Sik
AU - Moon, Ki Seok
AU - Sunwoo, Kuk Hyun
PY - 2000/5/1
Y1 - 2000/5/1
N2 - Magnetic properties of electrodeposited CoNiFeS films were studied to seek their feasibility for applications in microelectromagnetic devices such as high areal density recording heads. We started with NiFe and then expanded experiments to a CoNiFe system. Finally, we added a fourth element, sulfur, to further improve physical properties. A small amount of sulfur inclusion has induced grain size refinement and offered magnetic softness to the film accompanying with increased electrical resistivity. Grain size was found to be in the order of 10 nm. Co73Ni17Fe9S1 (in wt. %) films with thickness of 2.5 μm exhibit superior properties compared with currently utilized Ni45Fe55: high saturation magnetic flux density (Bs∼17 kG), low coercivity (Hc∼0.4 Oe), near zero saturation magnetostriction (λs∼1.0×10-6), high permeability (μ∼1300 at 100 MHz), and high electrical resistivity (ρ∼55 μΩ cm). From a processing standpoint, we were able to control film thickness uniformity by adjusting current distributions between the auxiliary electrode and cathode across 100 mm wafers.
AB - Magnetic properties of electrodeposited CoNiFeS films were studied to seek their feasibility for applications in microelectromagnetic devices such as high areal density recording heads. We started with NiFe and then expanded experiments to a CoNiFe system. Finally, we added a fourth element, sulfur, to further improve physical properties. A small amount of sulfur inclusion has induced grain size refinement and offered magnetic softness to the film accompanying with increased electrical resistivity. Grain size was found to be in the order of 10 nm. Co73Ni17Fe9S1 (in wt. %) films with thickness of 2.5 μm exhibit superior properties compared with currently utilized Ni45Fe55: high saturation magnetic flux density (Bs∼17 kG), low coercivity (Hc∼0.4 Oe), near zero saturation magnetostriction (λs∼1.0×10-6), high permeability (μ∼1300 at 100 MHz), and high electrical resistivity (ρ∼55 μΩ cm). From a processing standpoint, we were able to control film thickness uniformity by adjusting current distributions between the auxiliary electrode and cathode across 100 mm wafers.
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M3 - Article
AN - SCOPUS:0001750482
VL - 87
SP - 5413
EP - 5415
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9 II
ER -