Abstract
Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall resistance (PHR). Interestingly, one GaMnAs layer manifests a positive change in PHR, while the other layer shows a negative change for the same rotation of magnetization. Such opposite behavior of the two layers indicates that anisotropic magnetoresistance (AMR) has opposite signs in the two GaMnAs layers. Owing to this opposite behavior of AMR, we are able to identify the sequence of magnetic alignments in the two GaMnAs layers during magnetization reversal. The PHR signal can then be decomposed into two independent contributions, which reveal that the magnetic anisotropy of the GaMnAs layer with negative AMR is predominantly cubic, while it is predominantly uniaxial in the layer with positive AMR. This investigation suggests the ability of engineering the sign of AMR in GaMnAs multilayers, thus making it possible to obtain structures with multi-valued PHR, that can be used as multinary magnetic memory devices.
| Original language | English |
|---|---|
| Article number | 2288 |
| Journal | Scientific Reports |
| Volume | 8 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2018 Dec 1 |
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Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance. / Lee, Kyung Jae; Lee, Sangyeop; Bac, Seul Ki; Choi, Seonghoon; Lee, Hakjoon; Chang, Jihoon; Choi, Suho; Chongthanaphisut, Phunvira; Lee, Sang Hoon; Liu, X.; Dobrowolska, M.; Furdyna, J. K.
In: Scientific Reports, Vol. 8, No. 1, 2288, 01.12.2018.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance
AU - Lee, Kyung Jae
AU - Lee, Sangyeop
AU - Bac, Seul Ki
AU - Choi, Seonghoon
AU - Lee, Hakjoon
AU - Chang, Jihoon
AU - Choi, Suho
AU - Chongthanaphisut, Phunvira
AU - Lee, Sang Hoon
AU - Liu, X.
AU - Dobrowolska, M.
AU - Furdyna, J. K.
PY - 2018/12/1
Y1 - 2018/12/1
N2 - Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall resistance (PHR). Interestingly, one GaMnAs layer manifests a positive change in PHR, while the other layer shows a negative change for the same rotation of magnetization. Such opposite behavior of the two layers indicates that anisotropic magnetoresistance (AMR) has opposite signs in the two GaMnAs layers. Owing to this opposite behavior of AMR, we are able to identify the sequence of magnetic alignments in the two GaMnAs layers during magnetization reversal. The PHR signal can then be decomposed into two independent contributions, which reveal that the magnetic anisotropy of the GaMnAs layer with negative AMR is predominantly cubic, while it is predominantly uniaxial in the layer with positive AMR. This investigation suggests the ability of engineering the sign of AMR in GaMnAs multilayers, thus making it possible to obtain structures with multi-valued PHR, that can be used as multinary magnetic memory devices.
AB - Magnetization reversal in a GaMnAs trilayer system consisting of two GaMnAs layers separated by a Be-doped GaAs spacer was investigated by magnetotransport measurements. The rotation of magnetization in the two GaMnAs layers is observed as two abrupt independent transitions in planar Hall resistance (PHR). Interestingly, one GaMnAs layer manifests a positive change in PHR, while the other layer shows a negative change for the same rotation of magnetization. Such opposite behavior of the two layers indicates that anisotropic magnetoresistance (AMR) has opposite signs in the two GaMnAs layers. Owing to this opposite behavior of AMR, we are able to identify the sequence of magnetic alignments in the two GaMnAs layers during magnetization reversal. The PHR signal can then be decomposed into two independent contributions, which reveal that the magnetic anisotropy of the GaMnAs layer with negative AMR is predominantly cubic, while it is predominantly uniaxial in the layer with positive AMR. This investigation suggests the ability of engineering the sign of AMR in GaMnAs multilayers, thus making it possible to obtain structures with multi-valued PHR, that can be used as multinary magnetic memory devices.
UR - http://www.scopus.com/inward/record.url?scp=85041590469&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85041590469&partnerID=8YFLogxK
U2 - 10.1038/s41598-018-20749-8
DO - 10.1038/s41598-018-20749-8
M3 - Article
C2 - 29396557
AN - SCOPUS:85041590469
VL - 8
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
IS - 1
M1 - 2288
ER -