Magnetization reversal under nonuniform magnetic fields at conditions relevant to magnetic random access memory applications

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Computer simulation was used to investigate the magnetization switching behavior by measuring the hysteresis loops and generating the magnetization configuration at various stages of a field cycle. Three different types of self-fields with varying degrees of distribution were considered. Self-field was calculated at a distance of 0.13 μm from the word line. The resultant data were analyzed.

Original languageEnglish
Pages (from-to)3761-3763
Number of pages3
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 2003 Nov 3


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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