Magnetization reversal under nonuniform magnetic fields at conditions relevant to magnetic random access memory applications

K. S. Kim; C. E. Lee; S. H. Lim

doi:10.1063/1.1625105

Magnetization reversal under nonuniform magnetic fields at conditions relevant to magnetic random access memory applications

K. S. Kim, C. E. Lee, S. H. Lim

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Computer simulation was used to investigate the magnetization switching behavior by measuring the hysteresis loops and generating the magnetization configuration at various stages of a field cycle. Three different types of self-fields with varying degrees of distribution were considered. Self-field was calculated at a distance of 0.13 μm from the word line. The resultant data were analyzed.

Original language	English
Pages (from-to)	3761-3763
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	18
DOIs	https://doi.org/10.1063/1.1625105
Publication status	Published - 2003 Nov 3

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1625105

Cite this

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title = "Magnetization reversal under nonuniform magnetic fields at conditions relevant to magnetic random access memory applications",

abstract = "Computer simulation was used to investigate the magnetization switching behavior by measuring the hysteresis loops and generating the magnetization configuration at various stages of a field cycle. Three different types of self-fields with varying degrees of distribution were considered. Self-field was calculated at a distance of 0.13 μm from the word line. The resultant data were analyzed.",

author = "Kim, {K. S.} and Lee, {C. E.} and Lim, {S. H.}",

year = "2003",

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N2 - Computer simulation was used to investigate the magnetization switching behavior by measuring the hysteresis loops and generating the magnetization configuration at various stages of a field cycle. Three different types of self-fields with varying degrees of distribution were considered. Self-field was calculated at a distance of 0.13 μm from the word line. The resultant data were analyzed.

AB - Computer simulation was used to investigate the magnetization switching behavior by measuring the hysteresis loops and generating the magnetization configuration at various stages of a field cycle. Three different types of self-fields with varying degrees of distribution were considered. Self-field was calculated at a distance of 0.13 μm from the word line. The resultant data were analyzed.

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Magnetization reversal under nonuniform magnetic fields at conditions relevant to magnetic random access memory applications

Abstract

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