Magnetization reversal under nonuniform magnetic fields at conditions relevant to magnetic random access memory applications

K. S. Kim, C. E. Lee, S. H. Lim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Computer simulation was used to investigate the magnetization switching behavior by measuring the hysteresis loops and generating the magnetization configuration at various stages of a field cycle. Three different types of self-fields with varying degrees of distribution were considered. Self-field was calculated at a distance of 0.13 μm from the word line. The resultant data were analyzed.

Original languageEnglish
Pages (from-to)3761-3763
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number18
DOIs
Publication statusPublished - 2003 Nov 3

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Magnetization reversal under nonuniform magnetic fields at conditions relevant to magnetic random access memory applications'. Together they form a unique fingerprint.

  • Cite this