Magnetization switching and tunneling magnetoresistance effects of MTJs with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB

J. R. Rhee, J. Y. Hwang, S. S. Kim, M. Y. Kim, B. S. Chun, I. S. Yoo, B. S. Oh, Y. K. Kim, T. W. Kim, W. J. Park

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10 Citations (Scopus)

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