Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromanet free layers consisting of amorphous CoFeSiB

Jae Youn Hwang, Soon Sub Kim, Jang Rob Rhee, Byong Sun Chun, Il Sang You, Byung Seok Oh, Young Keun Kim, Taewan Kim, Wanjun Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationINTERMAG ASIA 2005
Subtitle of host publicationDigests of the IEEE International Magnetics Conference
Number of pages1
Publication statusPublished - 2005
EventINTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference - Nagoya, Japan
Duration: 2005 Apr 42005 Apr 8

Publication series

NameINTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference

Other

OtherINTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference
CountryJapan
CityNagoya
Period05/4/405/4/8

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hwang, J. Y., Kim, S. S., Rhee, J. R., Chun, B. S., You, I. S., Oh, B. S., Kim, Y. K., Kim, T., & Park, W. (2005). Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromanet free layers consisting of amorphous CoFeSiB. In INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference (INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference).