Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Yi Wang, Dapeng Zhu, Yumeng Yang, Kyusup Lee, Rahul Mishra, Gyungchoon Go, Se Hyeok Oh, Dong Hyun Kim, Kaiming Cai, Enlong Liu, Shawn D. Pollard, Shuyuan Shi, Jongmin Lee, Kie Leong Teo, Yihong Wu, Kyung Jin Lee, Hyunsoo Yang

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Abstract

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

Original languageEnglish
Pages (from-to)1125-1128
Number of pages4
JournalScience
Volume366
Issue number6469
DOIs
Publication statusPublished - 2019 Nov 29

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Torque
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Electrons
Magnets
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Temperature
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Wang, Y., Zhu, D., Yang, Y., Lee, K., Mishra, R., Go, G., ... Yang, H. (2019). Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator. Science, 366(6469), 1125-1128. https://doi.org/10.1126/science.aav8076

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator. / Wang, Yi; Zhu, Dapeng; Yang, Yumeng; Lee, Kyusup; Mishra, Rahul; Go, Gyungchoon; Oh, Se Hyeok; Kim, Dong Hyun; Cai, Kaiming; Liu, Enlong; Pollard, Shawn D.; Shi, Shuyuan; Lee, Jongmin; Teo, Kie Leong; Wu, Yihong; Lee, Kyung Jin; Yang, Hyunsoo.

In: Science, Vol. 366, No. 6469, 29.11.2019, p. 1125-1128.

Research output: Contribution to journalArticle

Wang, Y, Zhu, D, Yang, Y, Lee, K, Mishra, R, Go, G, Oh, SH, Kim, DH, Cai, K, Liu, E, Pollard, SD, Shi, S, Lee, J, Teo, KL, Wu, Y, Lee, KJ & Yang, H 2019, 'Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator', Science, vol. 366, no. 6469, pp. 1125-1128. https://doi.org/10.1126/science.aav8076
Wang, Yi ; Zhu, Dapeng ; Yang, Yumeng ; Lee, Kyusup ; Mishra, Rahul ; Go, Gyungchoon ; Oh, Se Hyeok ; Kim, Dong Hyun ; Cai, Kaiming ; Liu, Enlong ; Pollard, Shawn D. ; Shi, Shuyuan ; Lee, Jongmin ; Teo, Kie Leong ; Wu, Yihong ; Lee, Kyung Jin ; Yang, Hyunsoo. / Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator. In: Science. 2019 ; Vol. 366, No. 6469. pp. 1125-1128.
@article{8dbe5a24efc64832bde12164dbdef940,
title = "Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator",
abstract = "Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.",
author = "Yi Wang and Dapeng Zhu and Yumeng Yang and Kyusup Lee and Rahul Mishra and Gyungchoon Go and Oh, {Se Hyeok} and Kim, {Dong Hyun} and Kaiming Cai and Enlong Liu and Pollard, {Shawn D.} and Shuyuan Shi and Jongmin Lee and Teo, {Kie Leong} and Yihong Wu and Lee, {Kyung Jin} and Hyunsoo Yang",
year = "2019",
month = "11",
day = "29",
doi = "10.1126/science.aav8076",
language = "English",
volume = "366",
pages = "1125--1128",
journal = "Science",
issn = "0036-8075",
publisher = "American Association for the Advancement of Science",
number = "6469",

}

TY - JOUR

T1 - Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

AU - Wang, Yi

AU - Zhu, Dapeng

AU - Yang, Yumeng

AU - Lee, Kyusup

AU - Mishra, Rahul

AU - Go, Gyungchoon

AU - Oh, Se Hyeok

AU - Kim, Dong Hyun

AU - Cai, Kaiming

AU - Liu, Enlong

AU - Pollard, Shawn D.

AU - Shi, Shuyuan

AU - Lee, Jongmin

AU - Teo, Kie Leong

AU - Wu, Yihong

AU - Lee, Kyung Jin

AU - Yang, Hyunsoo

PY - 2019/11/29

Y1 - 2019/11/29

N2 - Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

AB - Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

UR - http://www.scopus.com/inward/record.url?scp=85075800018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85075800018&partnerID=8YFLogxK

U2 - 10.1126/science.aav8076

DO - 10.1126/science.aav8076

M3 - Article

C2 - 31780558

AN - SCOPUS:85075800018

VL - 366

SP - 1125

EP - 1128

JO - Science

JF - Science

SN - 0036-8075

IS - 6469

ER -