Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Yi Wang, Dapeng Zhu, Yumeng Yang, Kyusup Lee, Rahul Mishra, Gyungchoon Go, Se Hyeok Oh, Dong Hyun Kim, Kaiming Cai, Enlong Liu, Shawn D. Pollard, Shuyuan Shi, Jongmin Lee, Kie Leong Teo, Yihong Wu, Kyung Jin Lee, Hyunsoo Yang

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10 Citations (Scopus)

Abstract

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

Original languageEnglish
Pages (from-to)1125-1128
Number of pages4
JournalScience
Volume366
Issue number6469
DOIs
Publication statusPublished - 2019 Nov 29

ASJC Scopus subject areas

  • General

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    Wang, Y., Zhu, D., Yang, Y., Lee, K., Mishra, R., Go, G., Oh, S. H., Kim, D. H., Cai, K., Liu, E., Pollard, S. D., Shi, S., Lee, J., Teo, K. L., Wu, Y., Lee, K. J., & Yang, H. (2019). Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator. Science, 366(6469), 1125-1128. https://doi.org/10.1126/science.aav8076