Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

Byong Sun Chun, Jae Youn Hwang, Jang Roh Rhee, Taewan Kim, Shin Saito, Satoru Yoshimura, Masakiyo Tsunoda, Migaku Takahashi, Young-geun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJs) comprising amorphous Co70.5Fe4.5Si15B10, possessing low saturation magnetization of 560 emu/cm3, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.

Original languageEnglish
JournalJournal of Magnetism and Magnetic Materials
Volume303
Issue number2 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Aug 1

Fingerprint

Tunnel junctions
tunnel junctions
Magnetization
Optical Kerr effect
magnetization
Saturation magnetization
Kerr effects
micrometers
Scanning
saturation
scanning

Keywords

  • Amorphous ferromagnetic materials
  • CoFeSiB
  • Magnetic tunnel junctions

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions. / Chun, Byong Sun; Hwang, Jae Youn; Rhee, Jang Roh; Kim, Taewan; Saito, Shin; Yoshimura, Satoru; Tsunoda, Masakiyo; Takahashi, Migaku; Kim, Young-geun.

In: Journal of Magnetism and Magnetic Materials, Vol. 303, No. 2 SPEC. ISS., 01.08.2006.

Research output: Contribution to journalArticle

Chun, BS, Hwang, JY, Rhee, JR, Kim, T, Saito, S, Yoshimura, S, Tsunoda, M, Takahashi, M & Kim, Y 2006, 'Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions', Journal of Magnetism and Magnetic Materials, vol. 303, no. 2 SPEC. ISS.. https://doi.org/10.1016/j.jmmm.2006.01.041
Chun, Byong Sun ; Hwang, Jae Youn ; Rhee, Jang Roh ; Kim, Taewan ; Saito, Shin ; Yoshimura, Satoru ; Tsunoda, Masakiyo ; Takahashi, Migaku ; Kim, Young-geun. / Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions. In: Journal of Magnetism and Magnetic Materials. 2006 ; Vol. 303, No. 2 SPEC. ISS.
@article{c500aea12e4d49f1b77b3ab81261f04d,
title = "Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions",
abstract = "Magnetic tunnel junctions (MTJs) comprising amorphous Co70.5Fe4.5Si15B10, possessing low saturation magnetization of 560 emu/cm3, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.",
keywords = "Amorphous ferromagnetic materials, CoFeSiB, Magnetic tunnel junctions",
author = "Chun, {Byong Sun} and Hwang, {Jae Youn} and Rhee, {Jang Roh} and Taewan Kim and Shin Saito and Satoru Yoshimura and Masakiyo Tsunoda and Migaku Takahashi and Young-geun Kim",
year = "2006",
month = "8",
day = "1",
doi = "10.1016/j.jmmm.2006.01.041",
language = "English",
volume = "303",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",
number = "2 SPEC. ISS.",

}

TY - JOUR

T1 - Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

AU - Chun, Byong Sun

AU - Hwang, Jae Youn

AU - Rhee, Jang Roh

AU - Kim, Taewan

AU - Saito, Shin

AU - Yoshimura, Satoru

AU - Tsunoda, Masakiyo

AU - Takahashi, Migaku

AU - Kim, Young-geun

PY - 2006/8/1

Y1 - 2006/8/1

N2 - Magnetic tunnel junctions (MTJs) comprising amorphous Co70.5Fe4.5Si15B10, possessing low saturation magnetization of 560 emu/cm3, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.

AB - Magnetic tunnel junctions (MTJs) comprising amorphous Co70.5Fe4.5Si15B10, possessing low saturation magnetization of 560 emu/cm3, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.

KW - Amorphous ferromagnetic materials

KW - CoFeSiB

KW - Magnetic tunnel junctions

UR - http://www.scopus.com/inward/record.url?scp=33646228647&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646228647&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.01.041

DO - 10.1016/j.jmmm.2006.01.041

M3 - Article

AN - SCOPUS:33646228647

VL - 303

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 2 SPEC. ISS.

ER -