Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

Byong Sun Chun; Jae Youn Hwang; Jang Roh Rhee; Taewan Kim; Shin Saito; Satoru Yoshimura; Masakiyo Tsunoda; Migaku Takahashi; Young Keun Kim

doi:10.1016/j.jmmm.2006.01.041

Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

Byong Sun Chun, Jae Youn Hwang, Jang Roh Rhee, Taewan Kim, Shin Saito, Satoru Yoshimura, Masakiyo Tsunoda, Migaku Takahashi, Young Keun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJs) comprising amorphous Co_70.5Fe_4.5Si₁₅B₁₀, possessing low saturation magnetization of 560 emu/cm³, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.

Original language	English
Pages (from-to)	e223-e225
Journal	Journal of Magnetism and Magnetic Materials
Volume	303
Issue number	2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jmmm.2006.01.041
Publication status	Published - 2006 Aug

Keywords

Amorphous ferromagnetic materials
CoFeSiB
Magnetic tunnel junctions

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2006.01.041

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@article{c500aea12e4d49f1b77b3ab81261f04d,

title = "Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions",

abstract = "Magnetic tunnel junctions (MTJs) comprising amorphous Co70.5Fe4.5Si15B10, possessing low saturation magnetization of 560 emu/cm3, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.",

keywords = "Amorphous ferromagnetic materials, CoFeSiB, Magnetic tunnel junctions",

author = "Chun, {Byong Sun} and Hwang, {Jae Youn} and Rhee, {Jang Roh} and Taewan Kim and Shin Saito and Satoru Yoshimura and Masakiyo Tsunoda and Migaku Takahashi and Kim, {Young Keun}",

note = "Funding Information: This work was supported by the Korea Ministry of Science and Technology under contract National Research Laboratory Program, and by Grant No. R01-2003-00-10644-0 from the Basic Research Program of the Korea Science and Engineering Foundation, and by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program.",

year = "2006",

month = aug,

doi = "10.1016/j.jmmm.2006.01.041",

language = "English",

volume = "303",

pages = "e223--e225",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "2 SPEC. ISS.",

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TY - JOUR

T1 - Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

AU - Chun, Byong Sun

AU - Hwang, Jae Youn

AU - Rhee, Jang Roh

AU - Kim, Taewan

AU - Saito, Shin

AU - Yoshimura, Satoru

AU - Tsunoda, Masakiyo

AU - Takahashi, Migaku

AU - Kim, Young Keun

N1 - Funding Information: This work was supported by the Korea Ministry of Science and Technology under contract National Research Laboratory Program, and by Grant No. R01-2003-00-10644-0 from the Basic Research Program of the Korea Science and Engineering Foundation, and by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program.

PY - 2006/8

Y1 - 2006/8

N2 - Magnetic tunnel junctions (MTJs) comprising amorphous Co70.5Fe4.5Si15B10, possessing low saturation magnetization of 560 emu/cm3, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.

AB - Magnetic tunnel junctions (MTJs) comprising amorphous Co70.5Fe4.5Si15B10, possessing low saturation magnetization of 560 emu/cm3, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.

KW - Amorphous ferromagnetic materials

KW - CoFeSiB

KW - Magnetic tunnel junctions

UR - http://www.scopus.com/inward/record.url?scp=33646228647&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.01.041

DO - 10.1016/j.jmmm.2006.01.041

M3 - Article

AN - SCOPUS:33646228647

SN - 0304-8853

VL - 303

SP - e223-e225

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SPEC. ISS.

ER -

Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

Abstract

Keywords

ASJC Scopus subject areas

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