Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

Byong Sun Chun, Jae Youn Hwang, Jang Roh Rhee, Taewan Kim, Shin Saito, Satoru Yoshimura, Masakiyo Tsunoda, Migaku Takahashi, Young Keun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJs) comprising amorphous Co70.5Fe4.5Si15B10, possessing low saturation magnetization of 560 emu/cm3, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.

Original languageEnglish
Pages (from-to)e223-e225
JournalJournal of Magnetism and Magnetic Materials
Volume303
Issue number2 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Aug

Keywords

  • Amorphous ferromagnetic materials
  • CoFeSiB
  • Magnetic tunnel junctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Chun, B. S., Hwang, J. Y., Rhee, J. R., Kim, T., Saito, S., Yoshimura, S., Tsunoda, M., Takahashi, M., & Kim, Y. K. (2006). Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions. Journal of Magnetism and Magnetic Materials, 303(2 SPEC. ISS.), e223-e225. https://doi.org/10.1016/j.jmmm.2006.01.041