Magnetization switching of CoFeSiB free-layered magnetic tunnel junctions

Byong Sun Chun, Jae Youn Hwang, Jang Roh Rhee, Taewan Kim, Shin Saito, Satoru Yoshimura, Masakiyo Tsunoda, Migaku Takahashi, Young-geun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJs) comprising amorphous Co70.5Fe4.5Si15B10, possessing low saturation magnetization of 560 emu/cm3, as a free layer have been investigated. The switching behaviours were confirmed for the micrometer-sized elements experimentally, using the scanning magneto-optical Kerr effect (scanning MOKE). A micromagnetic modelling study was also carried out for the submicrometer-sized elements. By using either a CoFeSiB single or a synthetic antiferromagnetic free-layer structure, the magnetization switching field became much lower than conventionally used CoFe free layered MTJs.

Original languageEnglish
JournalJournal of Magnetism and Magnetic Materials
Volume303
Issue number2 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Aug 1

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Keywords

  • Amorphous ferromagnetic materials
  • CoFeSiB
  • Magnetic tunnel junctions

ASJC Scopus subject areas

  • Condensed Matter Physics

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