Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions

B. S. Chun; S. P. Ko; B. S. Oh; J. Y. Hwang; J. R. Rhee; T. W. Kim; S. Saito; S. Yoshimura; M. Tsunoda; M. Takahashi; Y. K. Kim

doi:10.1016/j.jmmm.2006.02.052

Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions

B. S. Chun, S. P. Ko, B. S. Oh, J. Y. Hwang, J. R. Rhee, T. W. Kim, S. Saito, S. Yoshimura, M. Tsunoda, M. Takahashi, Y. K. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Ferromagnetic amorphous Ni₁₆Fe₆₂Si₈B₁₄ layer have been studied as free layers for magnetic tunnel junctions (MTJs) to enhance cell switching performance. Traditional MTJ free layer materials such as NiFe and CoFe were also prepared for switching comparison purposes. Both NiFeSiB and NiFe resulted in an order of magnitude smaller switching fields compared to the CoFe. The switching field was further reduced for the synthetic antiferromagnetic NiFeSiB free layered structure.

Original language	English
Pages (from-to)	e258-e260
Journal	Journal of Magnetism and Magnetic Materials
Volume	304
Issue number	1
DOIs	https://doi.org/10.1016/j.jmmm.2006.02.052
Publication status	Published - 2006 Sept

Keywords

Amorphous ferromagnet
Magnetic tunnel junctions
NiFeSiB film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2006.02.052

Cite this

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title = "Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions",

abstract = "Ferromagnetic amorphous Ni16Fe62Si8B14 layer have been studied as free layers for magnetic tunnel junctions (MTJs) to enhance cell switching performance. Traditional MTJ free layer materials such as NiFe and CoFe were also prepared for switching comparison purposes. Both NiFeSiB and NiFe resulted in an order of magnitude smaller switching fields compared to the CoFe. The switching field was further reduced for the synthetic antiferromagnetic NiFeSiB free layered structure.",

keywords = "Amorphous ferromagnet, Magnetic tunnel junctions, NiFeSiB film",

author = "Chun, {B. S.} and Ko, {S. P.} and Oh, {B. S.} and Hwang, {J. Y.} and Rhee, {J. R.} and Kim, {T. W.} and S. Saito and S. Yoshimura and M. Tsunoda and M. Takahashi and Kim, {Y. K.}",

note = "Funding Information: This work was supported by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program, by Grant R01-2003-00-10644-0 from the Basic Research Program, and by Grant M10500000105-05J0000-10510 from the National Research Laboratory Program of the Korea Science and Engineering Foundation. ",

year = "2006",

month = sep,

doi = "10.1016/j.jmmm.2006.02.052",

language = "English",

volume = "304",

pages = "e258--e260",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

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TY - JOUR

T1 - Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions

AU - Chun, B. S.

AU - Ko, S. P.

AU - Oh, B. S.

AU - Hwang, J. Y.

AU - Rhee, J. R.

AU - Kim, T. W.

AU - Saito, S.

AU - Yoshimura, S.

AU - Tsunoda, M.

AU - Takahashi, M.

AU - Kim, Y. K.

N1 - Funding Information: This work was supported by the National Program for Tera-level Nanodevices as a 21st Century Frontier Program, by Grant R01-2003-00-10644-0 from the Basic Research Program, and by Grant M10500000105-05J0000-10510 from the National Research Laboratory Program of the Korea Science and Engineering Foundation.

PY - 2006/9

Y1 - 2006/9

N2 - Ferromagnetic amorphous Ni16Fe62Si8B14 layer have been studied as free layers for magnetic tunnel junctions (MTJs) to enhance cell switching performance. Traditional MTJ free layer materials such as NiFe and CoFe were also prepared for switching comparison purposes. Both NiFeSiB and NiFe resulted in an order of magnitude smaller switching fields compared to the CoFe. The switching field was further reduced for the synthetic antiferromagnetic NiFeSiB free layered structure.

AB - Ferromagnetic amorphous Ni16Fe62Si8B14 layer have been studied as free layers for magnetic tunnel junctions (MTJs) to enhance cell switching performance. Traditional MTJ free layer materials such as NiFe and CoFe were also prepared for switching comparison purposes. Both NiFeSiB and NiFe resulted in an order of magnitude smaller switching fields compared to the CoFe. The switching field was further reduced for the synthetic antiferromagnetic NiFeSiB free layered structure.

KW - Amorphous ferromagnet

KW - Magnetic tunnel junctions

KW - NiFeSiB film

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U2 - 10.1016/j.jmmm.2006.02.052

DO - 10.1016/j.jmmm.2006.02.052

M3 - Article

AN - SCOPUS:33646887032

SN - 0304-8853

VL - 304

SP - e258-e260

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1

ER -

Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions

Abstract

Keywords

ASJC Scopus subject areas

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