Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions

B. S. Chun, S. P. Ko, B. S. Oh, J. Y. Hwang, J. R. Rhee, T. W. Kim, S. Saito, S. Yoshimura, M. Tsunoda, M. Takahashi, Y. K. Kim

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1 Citation (Scopus)

Abstract

Ferromagnetic amorphous Ni16Fe62Si8B14 layer have been studied as free layers for magnetic tunnel junctions (MTJs) to enhance cell switching performance. Traditional MTJ free layer materials such as NiFe and CoFe were also prepared for switching comparison purposes. Both NiFeSiB and NiFe resulted in an order of magnitude smaller switching fields compared to the CoFe. The switching field was further reduced for the synthetic antiferromagnetic NiFeSiB free layered structure.

Original languageEnglish
Pages (from-to)e258-e260
JournalJournal of Magnetism and Magnetic Materials
Volume304
Issue number1
DOIs
Publication statusPublished - 2006 Sep

Keywords

  • Amorphous ferromagnet
  • Magnetic tunnel junctions
  • NiFeSiB film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Chun, B. S., Ko, S. P., Oh, B. S., Hwang, J. Y., Rhee, J. R., Kim, T. W., Saito, S., Yoshimura, S., Tsunoda, M., Takahashi, M., & Kim, Y. K. (2006). Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions. Journal of Magnetism and Magnetic Materials, 304(1), e258-e260. https://doi.org/10.1016/j.jmmm.2006.02.052