Magneto-optical study of nonmagnetic quantum dots coupled to a magnetic semiconductor quantum well

Sang Hoon Lee, M. Dobrowolska, J. K. Furdyna

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have investigated a series of double-layer structures consisting of a layer of self-assembled non-magnetic CdSe quantum dots (QDs) separated by a thin ZnSe barrier from a ZnCdMnSe diluted magnetic semiconductor (DMSs) quantum well (QW). In the series, the thickness of the ZnSe barrier ranged between 12 and 40 nm. We observe two clearly defined photoluminescence (PL) peaks in all samples, corresponding to the CdSe QDs and the ZnCdMnSe QW, respectively. The PL intensity of the QW peak is observed to decrease systematically relative to the QD peak as the thickness of the ZnSe barrier decreases, indicating a corresponding increase in carrier tunneling from the QW to the QDs. Furthermore, polarization-selective PL measurements reveal that the degree of polarization of the PL emitted by the CdSe QDs increases with decreasing thickness of the ZnSe barriers. The observed behavior is discussed in terms of anti-parallel spin interaction between carriers localized in the non-magnetic QDs and in the magnetic QWs.

Original languageEnglish
Pages (from-to)271-275
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume26
Issue number1-4
DOIs
Publication statusPublished - 2005 Feb 1

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Magnetic semiconductors
Semiconductor quantum wells
Semiconductor quantum dots
quantum dots
quantum wells
Photoluminescence
photoluminescence
Polarization
polarization

Keywords

  • Magnetic semiconductors
  • Quantum dots
  • Spin polarization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Magneto-optical study of nonmagnetic quantum dots coupled to a magnetic semiconductor quantum well. / Lee, Sang Hoon; Dobrowolska, M.; Furdyna, J. K.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 26, No. 1-4, 01.02.2005, p. 271-275.

Research output: Contribution to journalArticle

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AB - We have investigated a series of double-layer structures consisting of a layer of self-assembled non-magnetic CdSe quantum dots (QDs) separated by a thin ZnSe barrier from a ZnCdMnSe diluted magnetic semiconductor (DMSs) quantum well (QW). In the series, the thickness of the ZnSe barrier ranged between 12 and 40 nm. We observe two clearly defined photoluminescence (PL) peaks in all samples, corresponding to the CdSe QDs and the ZnCdMnSe QW, respectively. The PL intensity of the QW peak is observed to decrease systematically relative to the QD peak as the thickness of the ZnSe barrier decreases, indicating a corresponding increase in carrier tunneling from the QW to the QDs. Furthermore, polarization-selective PL measurements reveal that the degree of polarization of the PL emitted by the CdSe QDs increases with decreasing thickness of the ZnSe barriers. The observed behavior is discussed in terms of anti-parallel spin interaction between carriers localized in the non-magnetic QDs and in the magnetic QWs.

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