Magneto-transport characteristics of magnetic tunnel junction with a synthetic antiferromagnetic amorphous CoFeSiB free layer

Byong S. Chun, S. Y. Lee, J. R. Rhee, H. I. Yim, J. Y. Hwang, T. W. Kim, Young-geun Kim

Research output: Contribution to journalArticle


A synthetic antiferromagnet (SAF) structure comprising two ferromagnetic amorphous CoFeSiB layers was employed as a free layer in magnetic tunnel junctions (MTJs) to enhance magnetotransport and magnetization switching performance. In Si-SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO xl.S/CoFeSiB t (t = 3.5,4.0,4.5, 5.0)/Ru 1.0/CoFeSiB 7-t/Ru 60 (nm) MTJ structures, the tunneling magnetoresistance (TMR) ratio, interlayer coupling field, and switching field all showed layer thickness dependence for 3.5 nm ≤ t ≤ 5 nm. When the CoFeSiB t layer (a lower ferromagnetic layer in the SAF structure) became thinner, a lower TMR ratio with a lower switching field was observed. Whereas, when the CoFeSiB t layer became thicker, a higher junction resistance with a lower interlayer coupling field was observed. This was resulted from the decrement of saturation magnetization and the smooth tunnel barrier/free-layer interface formation, respectively.

Original languageEnglish
Pages (from-to)2598-2600
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number11 PART 2
Publication statusPublished - 2008 Nov 1



  • Amorphous ferromagnetic
  • CoFeSiB
  • Magnetic tunnel junction
  • Synthetic antiferromagnet

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this