Magneto-transport characteristics of magnetic tunnel junction with a synthetic antiferromagnetic amorphous CoFeSiB free layer

Byong S. Chun; S. Y. Lee; J. R. Rhee; H. I. Yim; J. Y. Hwang; T. W. Kim; Young Keun Kim

doi:10.1109/TMAG.2008.2002383

Magneto-transport characteristics of magnetic tunnel junction with a synthetic antiferromagnetic amorphous CoFeSiB free layer

Byong S. Chun, S. Y. Lee, J. R. Rhee, H. I. Yim, J. Y. Hwang, T. W. Kim, Young Keun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A synthetic antiferromagnet (SAF) structure comprising two ferromagnetic amorphous CoFeSiB layers was employed as a free layer in magnetic tunnel junctions (MTJs) to enhance magnetotransport and magnetization switching performance. In Si-SiO₂/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO _xl.S/CoFeSiB t (t = 3.5,4.0,4.5, 5.0)/Ru 1.0/CoFeSiB 7-t/Ru 60 (nm) MTJ structures, the tunneling magnetoresistance (TMR) ratio, interlayer coupling field, and switching field all showed layer thickness dependence for 3.5 nm ≤ t ≤ 5 nm. When the CoFeSiB t layer (a lower ferromagnetic layer in the SAF structure) became thinner, a lower TMR ratio with a lower switching field was observed. Whereas, when the CoFeSiB t layer became thicker, a higher junction resistance with a lower interlayer coupling field was observed. This was resulted from the decrement of saturation magnetization and the smooth tunnel barrier/free-layer interface formation, respectively.

Original language	English
Pages (from-to)	2598-2600
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	44
Issue number	11 PART 2
DOIs	https://doi.org/10.1109/TMAG.2008.2002383
Publication status	Published - 2008 Nov

Keywords

Amorphous ferromagnetic
CoFeSiB
Magnetic tunnel junction
Synthetic antiferromagnet

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2008.2002383

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title = "Magneto-transport characteristics of magnetic tunnel junction with a synthetic antiferromagnetic amorphous CoFeSiB free layer",

abstract = "A synthetic antiferromagnet (SAF) structure comprising two ferromagnetic amorphous CoFeSiB layers was employed as a free layer in magnetic tunnel junctions (MTJs) to enhance magnetotransport and magnetization switching performance. In Si-SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO xl.S/CoFeSiB t (t = 3.5,4.0,4.5, 5.0)/Ru 1.0/CoFeSiB 7-t/Ru 60 (nm) MTJ structures, the tunneling magnetoresistance (TMR) ratio, interlayer coupling field, and switching field all showed layer thickness dependence for 3.5 nm ≤ t ≤ 5 nm. When the CoFeSiB t layer (a lower ferromagnetic layer in the SAF structure) became thinner, a lower TMR ratio with a lower switching field was observed. Whereas, when the CoFeSiB t layer became thicker, a higher junction resistance with a lower interlayer coupling field was observed. This was resulted from the decrement of saturation magnetization and the smooth tunnel barrier/free-layer interface formation, respectively.",

keywords = "Amorphous ferromagnetic, CoFeSiB, Magnetic tunnel junction, Synthetic antiferromagnet",

author = "Chun, {Byong S.} and Lee, {S. Y.} and Rhee, {J. R.} and Yim, {H. I.} and Hwang, {J. Y.} and Kim, {T. W.} and Kim, {Young Keun}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab Program funded by the Ministry of Science and Technology under M10500000105-05J0000-10510, in part by KOSEF through the National Program for Tera-level Nanodevices as a 21st Century Frontier Program under M103KC010006-06K0301-00631, in part by Grant R01-2006-000-10473-0 (2006, 2007) from the Basic Research Program of the Korea Science and Engineering Foundation, and in part by the Korea Research Foundation Grant funded by the Korean Government under KRF-2006-352-D00091.",

year = "2008",

month = nov,

doi = "10.1109/TMAG.2008.2002383",

language = "English",

volume = "44",

pages = "2598--2600",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11 PART 2",

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T1 - Magneto-transport characteristics of magnetic tunnel junction with a synthetic antiferromagnetic amorphous CoFeSiB free layer

AU - Chun, Byong S.

AU - Lee, S. Y.

AU - Rhee, J. R.

AU - Yim, H. I.

AU - Hwang, J. Y.

AU - Kim, T. W.

AU - Kim, Young Keun

N1 - Funding Information: ACKNOWLEDGMENT This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab Program funded by the Ministry of Science and Technology under M10500000105-05J0000-10510, in part by KOSEF through the National Program for Tera-level Nanodevices as a 21st Century Frontier Program under M103KC010006-06K0301-00631, in part by Grant R01-2006-000-10473-0 (2006, 2007) from the Basic Research Program of the Korea Science and Engineering Foundation, and in part by the Korea Research Foundation Grant funded by the Korean Government under KRF-2006-352-D00091.

PY - 2008/11

Y1 - 2008/11

N2 - A synthetic antiferromagnet (SAF) structure comprising two ferromagnetic amorphous CoFeSiB layers was employed as a free layer in magnetic tunnel junctions (MTJs) to enhance magnetotransport and magnetization switching performance. In Si-SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO xl.S/CoFeSiB t (t = 3.5,4.0,4.5, 5.0)/Ru 1.0/CoFeSiB 7-t/Ru 60 (nm) MTJ structures, the tunneling magnetoresistance (TMR) ratio, interlayer coupling field, and switching field all showed layer thickness dependence for 3.5 nm ≤ t ≤ 5 nm. When the CoFeSiB t layer (a lower ferromagnetic layer in the SAF structure) became thinner, a lower TMR ratio with a lower switching field was observed. Whereas, when the CoFeSiB t layer became thicker, a higher junction resistance with a lower interlayer coupling field was observed. This was resulted from the decrement of saturation magnetization and the smooth tunnel barrier/free-layer interface formation, respectively.

AB - A synthetic antiferromagnet (SAF) structure comprising two ferromagnetic amorphous CoFeSiB layers was employed as a free layer in magnetic tunnel junctions (MTJs) to enhance magnetotransport and magnetization switching performance. In Si-SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO xl.S/CoFeSiB t (t = 3.5,4.0,4.5, 5.0)/Ru 1.0/CoFeSiB 7-t/Ru 60 (nm) MTJ structures, the tunneling magnetoresistance (TMR) ratio, interlayer coupling field, and switching field all showed layer thickness dependence for 3.5 nm ≤ t ≤ 5 nm. When the CoFeSiB t layer (a lower ferromagnetic layer in the SAF structure) became thinner, a lower TMR ratio with a lower switching field was observed. Whereas, when the CoFeSiB t layer became thicker, a higher junction resistance with a lower interlayer coupling field was observed. This was resulted from the decrement of saturation magnetization and the smooth tunnel barrier/free-layer interface formation, respectively.

KW - Amorphous ferromagnetic

KW - CoFeSiB

KW - Magnetic tunnel junction

KW - Synthetic antiferromagnet

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U2 - 10.1109/TMAG.2008.2002383

DO - 10.1109/TMAG.2008.2002383

M3 - Article

AN - SCOPUS:85130086768

SN - 0018-9464

VL - 44

SP - 2598

EP - 2600

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 11 PART 2

ER -

Magneto-transport characteristics of magnetic tunnel junction with a synthetic antiferromagnetic amorphous CoFeSiB free layer

Abstract

Keywords

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