Magneto-transport properties of a GaMnAs-based ferromagnetic semiconductor trilayer structure grown on a ZnMnSe buffer

S. J. Chung, D. Y. Shin, Hyungchan Kim, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Magneto-transport properties have been investigated in a ferromagnetic GaMnAs/GaAlAs/GaMnAs semiconductor trilayer structure grown on a ZnMnSe buffer layer. The presence of the ZnMnSe buffer leads to the formation of a spin-valve-like structure, which provides the opportunity to investigate spin scattering effects by Hall resistance and magnetoresistance (MR) measurements in the current-in-plane (CIP) configuration. The Curie temperature (T c) and coercivity of the bottom GaMnAs layer are observed to be different from those of the top GaMnAs layer due to the proximity effect between the ferromagnetic GaMnAs and paramagnetic ZnMnSe layers. A two-step behavior is observed in the hysteresis loops of the Hall resistance, indicating that the coercive fields are different in the two GaMnAs layers in the trilayer structure. The magnetoresistance (MR) measured simultaneously with the Hall resistance shows a sudden increase in the field region where the magnetization of the two GaMnAs layers is different. Although the MR ratio was observed to be only 0.04% in our trilayer structure (due to the experimental CIP configuration), the study clearly demonstrates the presence of spin scattering in a trilayer ferromagnetic semiconductor structure grown on a ZnMnSe buffer.

Original languageEnglish
Pages (from-to)912-916
Number of pages5
JournalJournal of Electronic Materials
Volume37
Issue number6
DOIs
Publication statusPublished - 2008 Jun 1

Fingerprint

Magnetoresistance
Transport properties
Buffers
buffers
transport properties
Semiconductor materials
Hall resistance
Scattering
Buffer layers
Curie temperature
Hysteresis loops
Coercive force
Magnetization
configurations
scattering
coercivity
hysteresis
magnetization

Keywords

  • GaMnAs
  • Proximity effect
  • TMR
  • Trilayer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Magneto-transport properties of a GaMnAs-based ferromagnetic semiconductor trilayer structure grown on a ZnMnSe buffer. / Chung, S. J.; Shin, D. Y.; Kim, Hyungchan; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Journal of Electronic Materials, Vol. 37, No. 6, 01.06.2008, p. 912-916.

Research output: Contribution to journalArticle

Chung, S. J. ; Shin, D. Y. ; Kim, Hyungchan ; Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / Magneto-transport properties of a GaMnAs-based ferromagnetic semiconductor trilayer structure grown on a ZnMnSe buffer. In: Journal of Electronic Materials. 2008 ; Vol. 37, No. 6. pp. 912-916.
@article{82540411766a4651884a7a20a240c947,
title = "Magneto-transport properties of a GaMnAs-based ferromagnetic semiconductor trilayer structure grown on a ZnMnSe buffer",
abstract = "Magneto-transport properties have been investigated in a ferromagnetic GaMnAs/GaAlAs/GaMnAs semiconductor trilayer structure grown on a ZnMnSe buffer layer. The presence of the ZnMnSe buffer leads to the formation of a spin-valve-like structure, which provides the opportunity to investigate spin scattering effects by Hall resistance and magnetoresistance (MR) measurements in the current-in-plane (CIP) configuration. The Curie temperature (T c) and coercivity of the bottom GaMnAs layer are observed to be different from those of the top GaMnAs layer due to the proximity effect between the ferromagnetic GaMnAs and paramagnetic ZnMnSe layers. A two-step behavior is observed in the hysteresis loops of the Hall resistance, indicating that the coercive fields are different in the two GaMnAs layers in the trilayer structure. The magnetoresistance (MR) measured simultaneously with the Hall resistance shows a sudden increase in the field region where the magnetization of the two GaMnAs layers is different. Although the MR ratio was observed to be only 0.04{\%} in our trilayer structure (due to the experimental CIP configuration), the study clearly demonstrates the presence of spin scattering in a trilayer ferromagnetic semiconductor structure grown on a ZnMnSe buffer.",
keywords = "GaMnAs, Proximity effect, TMR, Trilayer",
author = "Chung, {S. J.} and Shin, {D. Y.} and Hyungchan Kim and Lee, {Sang Hoon} and X. Liu and Furdyna, {J. K.}",
year = "2008",
month = "6",
day = "1",
doi = "10.1007/s11664-008-0391-x",
language = "English",
volume = "37",
pages = "912--916",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "6",

}

TY - JOUR

T1 - Magneto-transport properties of a GaMnAs-based ferromagnetic semiconductor trilayer structure grown on a ZnMnSe buffer

AU - Chung, S. J.

AU - Shin, D. Y.

AU - Kim, Hyungchan

AU - Lee, Sang Hoon

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2008/6/1

Y1 - 2008/6/1

N2 - Magneto-transport properties have been investigated in a ferromagnetic GaMnAs/GaAlAs/GaMnAs semiconductor trilayer structure grown on a ZnMnSe buffer layer. The presence of the ZnMnSe buffer leads to the formation of a spin-valve-like structure, which provides the opportunity to investigate spin scattering effects by Hall resistance and magnetoresistance (MR) measurements in the current-in-plane (CIP) configuration. The Curie temperature (T c) and coercivity of the bottom GaMnAs layer are observed to be different from those of the top GaMnAs layer due to the proximity effect between the ferromagnetic GaMnAs and paramagnetic ZnMnSe layers. A two-step behavior is observed in the hysteresis loops of the Hall resistance, indicating that the coercive fields are different in the two GaMnAs layers in the trilayer structure. The magnetoresistance (MR) measured simultaneously with the Hall resistance shows a sudden increase in the field region where the magnetization of the two GaMnAs layers is different. Although the MR ratio was observed to be only 0.04% in our trilayer structure (due to the experimental CIP configuration), the study clearly demonstrates the presence of spin scattering in a trilayer ferromagnetic semiconductor structure grown on a ZnMnSe buffer.

AB - Magneto-transport properties have been investigated in a ferromagnetic GaMnAs/GaAlAs/GaMnAs semiconductor trilayer structure grown on a ZnMnSe buffer layer. The presence of the ZnMnSe buffer leads to the formation of a spin-valve-like structure, which provides the opportunity to investigate spin scattering effects by Hall resistance and magnetoresistance (MR) measurements in the current-in-plane (CIP) configuration. The Curie temperature (T c) and coercivity of the bottom GaMnAs layer are observed to be different from those of the top GaMnAs layer due to the proximity effect between the ferromagnetic GaMnAs and paramagnetic ZnMnSe layers. A two-step behavior is observed in the hysteresis loops of the Hall resistance, indicating that the coercive fields are different in the two GaMnAs layers in the trilayer structure. The magnetoresistance (MR) measured simultaneously with the Hall resistance shows a sudden increase in the field region where the magnetization of the two GaMnAs layers is different. Although the MR ratio was observed to be only 0.04% in our trilayer structure (due to the experimental CIP configuration), the study clearly demonstrates the presence of spin scattering in a trilayer ferromagnetic semiconductor structure grown on a ZnMnSe buffer.

KW - GaMnAs

KW - Proximity effect

KW - TMR

KW - Trilayer

UR - http://www.scopus.com/inward/record.url?scp=42449106905&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42449106905&partnerID=8YFLogxK

U2 - 10.1007/s11664-008-0391-x

DO - 10.1007/s11664-008-0391-x

M3 - Article

AN - SCOPUS:42449106905

VL - 37

SP - 912

EP - 916

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -