Abstract
We report annealing time effects on the microstructural evolution and resultant magneto-transport property changes in Ta/NiFe/CoFe/Cu/CoFe/PtMn/Ta spin valves comprising PtMn layer thicknesses ranging from 10 to 30 nm. Postdeposition annealing was performed at 270°C up to 35 h, The blocking temperatures of samples with 20 nm PtMn and 30 nm PtMn layers were found to be 350°C and 400°C, respectively. The magnetoresistance and interlayer coupling field changes became large as annealing time increased, in particular, for samples with relatively thicker PtMn layers. The main cause of microstructural changes and property degradation was due to interlayer diffusion of atomic constituents such as Mn, most likely through grain boundaries. Light B doping (1 at. %) in both free and pinned CoFe layers was proven effective in terms of blocking diffusion processes.
| Original language | English |
|---|---|
| Pages (from-to) | 6907-6909 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 89 |
| Issue number | 11 II |
| DOIs | |
| Publication status | Published - 2001 Jun 1 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
Magnetoresistance and interlayer diffusion in PtMn spin valves upon postdeposition annealing. / Kim, Young-geun; Lee, Seong Rae; Song, Se Ahn; Park, Gyeong Su; Yang, Hyuck Soo; Min, K. I.
In: Journal of Applied Physics, Vol. 89, No. 11 II, 01.06.2001, p. 6907-6909.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Magnetoresistance and interlayer diffusion in PtMn spin valves upon postdeposition annealing
AU - Kim, Young-geun
AU - Lee, Seong Rae
AU - Song, Se Ahn
AU - Park, Gyeong Su
AU - Yang, Hyuck Soo
AU - Min, K. I.
PY - 2001/6/1
Y1 - 2001/6/1
N2 - We report annealing time effects on the microstructural evolution and resultant magneto-transport property changes in Ta/NiFe/CoFe/Cu/CoFe/PtMn/Ta spin valves comprising PtMn layer thicknesses ranging from 10 to 30 nm. Postdeposition annealing was performed at 270°C up to 35 h, The blocking temperatures of samples with 20 nm PtMn and 30 nm PtMn layers were found to be 350°C and 400°C, respectively. The magnetoresistance and interlayer coupling field changes became large as annealing time increased, in particular, for samples with relatively thicker PtMn layers. The main cause of microstructural changes and property degradation was due to interlayer diffusion of atomic constituents such as Mn, most likely through grain boundaries. Light B doping (1 at. %) in both free and pinned CoFe layers was proven effective in terms of blocking diffusion processes.
AB - We report annealing time effects on the microstructural evolution and resultant magneto-transport property changes in Ta/NiFe/CoFe/Cu/CoFe/PtMn/Ta spin valves comprising PtMn layer thicknesses ranging from 10 to 30 nm. Postdeposition annealing was performed at 270°C up to 35 h, The blocking temperatures of samples with 20 nm PtMn and 30 nm PtMn layers were found to be 350°C and 400°C, respectively. The magnetoresistance and interlayer coupling field changes became large as annealing time increased, in particular, for samples with relatively thicker PtMn layers. The main cause of microstructural changes and property degradation was due to interlayer diffusion of atomic constituents such as Mn, most likely through grain boundaries. Light B doping (1 at. %) in both free and pinned CoFe layers was proven effective in terms of blocking diffusion processes.
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UR - http://www.scopus.com/inward/citedby.url?scp=0035356649&partnerID=8YFLogxK
U2 - 10.1063/1.1361260
DO - 10.1063/1.1361260
M3 - Article
VL - 89
SP - 6907
EP - 6909
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11 II
ER -