Magnetoresistance and magnetization switching characteristics of magnetic tunnel junctions with amorphous CoFeSiB single and synthetic antiferromagnet free layers

Jae Youn Hwang, Hae In Yim, Mee Yang Kim, Jang Roh Rhee, Byong Sun Chun, Young-geun Kim, Taewan Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

To obtain low switching field (Hsw) we introduced amorphous ferromagnetic Co70.5 Fe4.5 Si15 B10 single and synthetic antiferromagnet (SAF) free layers in magnetic tunnel junctions (MTJs). The switching characteristics for MTJs with structures SiSi O2 Ta 45/Ru 9.5/IrMn 10/CoFe 7Al Ox CoFeSiB 7 or CoFeSiB (t) Ru 1.0/CoFeSiB (7-t) Ru 60 (in nanometer) were investigated and compared to MTJs with Co75 Fe25 and Ni80 Fe20 free layers. CoFeSiB showed a lower saturation magnetization of 560 emu cm3 and a higher anisotropy constant of 2800 erg cm3 than CoFe and NiFe, respectively. An exchange coupling energy (Jex) of -0.003 erg cm2 was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the CoFeSiB single and SAF free layer MTJs, it was found that the size dependence of the Hsw originated from the lower Jex experimentally and by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. The CoFeSiB SAF structures showed lower Hsw than that of NiFe, CoFe, and CoFeSiB single structures. The CoFeSiB SAF structures were proved to be beneficial for the switching characteristics such as reducing the coercivity and increasing the sensitivity in micrometer- to submicrometer-sized elements.

Original languageEnglish
Article number08T315
JournalJournal of Applied Physics
Volume99
Issue number8
DOIs
Publication statusPublished - 2006 May 25

Fingerprint

tunnel junctions
magnetization
coercivity
micrometers
saturation
anisotropy
sensitivity
simulation
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Magnetoresistance and magnetization switching characteristics of magnetic tunnel junctions with amorphous CoFeSiB single and synthetic antiferromagnet free layers. / Hwang, Jae Youn; Yim, Hae In; Kim, Mee Yang; Rhee, Jang Roh; Chun, Byong Sun; Kim, Young-geun; Kim, Taewan.

In: Journal of Applied Physics, Vol. 99, No. 8, 08T315, 25.05.2006.

Research output: Contribution to journalArticle

@article{d90fda2586124f4cbad443606df07dfa,
title = "Magnetoresistance and magnetization switching characteristics of magnetic tunnel junctions with amorphous CoFeSiB single and synthetic antiferromagnet free layers",
abstract = "To obtain low switching field (Hsw) we introduced amorphous ferromagnetic Co70.5 Fe4.5 Si15 B10 single and synthetic antiferromagnet (SAF) free layers in magnetic tunnel junctions (MTJs). The switching characteristics for MTJs with structures SiSi O2 Ta 45/Ru 9.5/IrMn 10/CoFe 7Al Ox CoFeSiB 7 or CoFeSiB (t) Ru 1.0/CoFeSiB (7-t) Ru 60 (in nanometer) were investigated and compared to MTJs with Co75 Fe25 and Ni80 Fe20 free layers. CoFeSiB showed a lower saturation magnetization of 560 emu cm3 and a higher anisotropy constant of 2800 erg cm3 than CoFe and NiFe, respectively. An exchange coupling energy (Jex) of -0.003 erg cm2 was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the CoFeSiB single and SAF free layer MTJs, it was found that the size dependence of the Hsw originated from the lower Jex experimentally and by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. The CoFeSiB SAF structures showed lower Hsw than that of NiFe, CoFe, and CoFeSiB single structures. The CoFeSiB SAF structures were proved to be beneficial for the switching characteristics such as reducing the coercivity and increasing the sensitivity in micrometer- to submicrometer-sized elements.",
author = "Hwang, {Jae Youn} and Yim, {Hae In} and Kim, {Mee Yang} and Rhee, {Jang Roh} and Chun, {Byong Sun} and Young-geun Kim and Taewan Kim",
year = "2006",
month = "5",
day = "25",
doi = "10.1063/1.2176144",
language = "English",
volume = "99",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Magnetoresistance and magnetization switching characteristics of magnetic tunnel junctions with amorphous CoFeSiB single and synthetic antiferromagnet free layers

AU - Hwang, Jae Youn

AU - Yim, Hae In

AU - Kim, Mee Yang

AU - Rhee, Jang Roh

AU - Chun, Byong Sun

AU - Kim, Young-geun

AU - Kim, Taewan

PY - 2006/5/25

Y1 - 2006/5/25

N2 - To obtain low switching field (Hsw) we introduced amorphous ferromagnetic Co70.5 Fe4.5 Si15 B10 single and synthetic antiferromagnet (SAF) free layers in magnetic tunnel junctions (MTJs). The switching characteristics for MTJs with structures SiSi O2 Ta 45/Ru 9.5/IrMn 10/CoFe 7Al Ox CoFeSiB 7 or CoFeSiB (t) Ru 1.0/CoFeSiB (7-t) Ru 60 (in nanometer) were investigated and compared to MTJs with Co75 Fe25 and Ni80 Fe20 free layers. CoFeSiB showed a lower saturation magnetization of 560 emu cm3 and a higher anisotropy constant of 2800 erg cm3 than CoFe and NiFe, respectively. An exchange coupling energy (Jex) of -0.003 erg cm2 was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the CoFeSiB single and SAF free layer MTJs, it was found that the size dependence of the Hsw originated from the lower Jex experimentally and by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. The CoFeSiB SAF structures showed lower Hsw than that of NiFe, CoFe, and CoFeSiB single structures. The CoFeSiB SAF structures were proved to be beneficial for the switching characteristics such as reducing the coercivity and increasing the sensitivity in micrometer- to submicrometer-sized elements.

AB - To obtain low switching field (Hsw) we introduced amorphous ferromagnetic Co70.5 Fe4.5 Si15 B10 single and synthetic antiferromagnet (SAF) free layers in magnetic tunnel junctions (MTJs). The switching characteristics for MTJs with structures SiSi O2 Ta 45/Ru 9.5/IrMn 10/CoFe 7Al Ox CoFeSiB 7 or CoFeSiB (t) Ru 1.0/CoFeSiB (7-t) Ru 60 (in nanometer) were investigated and compared to MTJs with Co75 Fe25 and Ni80 Fe20 free layers. CoFeSiB showed a lower saturation magnetization of 560 emu cm3 and a higher anisotropy constant of 2800 erg cm3 than CoFe and NiFe, respectively. An exchange coupling energy (Jex) of -0.003 erg cm2 was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the CoFeSiB single and SAF free layer MTJs, it was found that the size dependence of the Hsw originated from the lower Jex experimentally and by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. The CoFeSiB SAF structures showed lower Hsw than that of NiFe, CoFe, and CoFeSiB single structures. The CoFeSiB SAF structures were proved to be beneficial for the switching characteristics such as reducing the coercivity and increasing the sensitivity in micrometer- to submicrometer-sized elements.

UR - http://www.scopus.com/inward/record.url?scp=33646733728&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646733728&partnerID=8YFLogxK

U2 - 10.1063/1.2176144

DO - 10.1063/1.2176144

M3 - Article

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

M1 - 08T315

ER -