Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized CoPd multilayers

Dongwon Lim, Sungdong Kim, Seong Rae Lee

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We investigated perpendicularly magnetized magnetic tunnel junctions (pMTJs) using CoPd multilayers and the effects of multilayer structure on the magnetoresistance. We obtained a tunneling magneto-resistance (TMR) ratio of 12.6% in a pseudo-pMTJ with a 9-nm -thick Pd underlayer. The number of bilayers of PdCo affected the magnetic anisotropy and the junction resistance. The TMR increased with the Pd underlayer because the interface uniformity and interface structure of the tunnel barrier (Al Ox) layer were improved. An exchange-biased pMTJ with IrMn had a small TMR because the antiferromagnetic layer increased the resistance of the pMTJ and reduced the spin polarization.

Original languageEnglish
Article number10C902
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
Publication statusPublished - 2005 May 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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