Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized CoPd multilayers

Dongwon Lim; Sungdong Kim; Seong Rae Lee

doi:10.1063/1.1845932

Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized CoPd multilayers

Dongwon Lim, Sungdong Kim, Seong Rae Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We investigated perpendicularly magnetized magnetic tunnel junctions (pMTJs) using CoPd multilayers and the effects of multilayer structure on the magnetoresistance. We obtained a tunneling magneto-resistance (TMR) ratio of 12.6% in a pseudo-pMTJ with a 9-nm -thick Pd underlayer. The number of bilayers of PdCo affected the magnetic anisotropy and the junction resistance. The TMR increased with the Pd underlayer because the interface uniformity and interface structure of the tunnel barrier (Al Ox) layer were improved. An exchange-biased pMTJ with IrMn had a small TMR because the antiferromagnetic layer increased the resistance of the pMTJ and reduced the spin polarization.

Original language	English
Article number	10C902
Journal	Journal of Applied Physics
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.1845932
Publication status	Published - 2005 May 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized CoPd multilayers",

abstract = "We investigated perpendicularly magnetized magnetic tunnel junctions (pMTJs) using CoPd multilayers and the effects of multilayer structure on the magnetoresistance. We obtained a tunneling magneto-resistance (TMR) ratio of 12.6% in a pseudo-pMTJ with a 9-nm -thick Pd underlayer. The number of bilayers of PdCo affected the magnetic anisotropy and the junction resistance. The TMR increased with the Pd underlayer because the interface uniformity and interface structure of the tunnel barrier (Al Ox) layer were improved. An exchange-biased pMTJ with IrMn had a small TMR because the antiferromagnetic layer increased the resistance of the pMTJ and reduced the spin polarization.",

author = "Dongwon Lim and Sungdong Kim and Lee, {Seong Rae}",

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T1 - Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized CoPd multilayers

AU - Lim, Dongwon

AU - Kim, Sungdong

AU - Lee, Seong Rae

N1 - Funding Information: This work supported by the Korea Ministry of Science and Technology under the National Research Laboratory program and Samsung Advanced Institute of Technology.

PY - 2005/5/15

Y1 - 2005/5/15

N2 - We investigated perpendicularly magnetized magnetic tunnel junctions (pMTJs) using CoPd multilayers and the effects of multilayer structure on the magnetoresistance. We obtained a tunneling magneto-resistance (TMR) ratio of 12.6% in a pseudo-pMTJ with a 9-nm -thick Pd underlayer. The number of bilayers of PdCo affected the magnetic anisotropy and the junction resistance. The TMR increased with the Pd underlayer because the interface uniformity and interface structure of the tunnel barrier (Al Ox) layer were improved. An exchange-biased pMTJ with IrMn had a small TMR because the antiferromagnetic layer increased the resistance of the pMTJ and reduced the spin polarization.

AB - We investigated perpendicularly magnetized magnetic tunnel junctions (pMTJs) using CoPd multilayers and the effects of multilayer structure on the magnetoresistance. We obtained a tunneling magneto-resistance (TMR) ratio of 12.6% in a pseudo-pMTJ with a 9-nm -thick Pd underlayer. The number of bilayers of PdCo affected the magnetic anisotropy and the junction resistance. The TMR increased with the Pd underlayer because the interface uniformity and interface structure of the tunnel barrier (Al Ox) layer were improved. An exchange-biased pMTJ with IrMn had a small TMR because the antiferromagnetic layer increased the resistance of the pMTJ and reduced the spin polarization.

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Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized CoPd multilayers

Abstract

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