Magnetoresistance of Ga1-xMnxAs Epitaxial Layers Doped by Be

Shavkat U. Yuldashev, Hyunsik Im, Vadim Sh Yalishev, Chang Soo Park, Tae Won Kang, Sanghoon Lee, Yuji Sasaki, Xin Liu, Jacek K. Furdyna

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6 Citations (Scopus)

Abstract

Magnetoresistance (MR) measurements were performed on Ga 1-xMnxAs (x = 0.03) additionally doped with Be. At low temperatures and in low magnetic fields, a positive MR signal was observed for measurements in the transverse (B ⊥ 1) geometry. However, at high temperatures, the MR becomes negative for all fields and all field orientations. The value of the negative MR has a maximum near the Curie temperature, and its magnitude depends strongly on the concentration of free holes. The observed MR behavior can be described by the magnetoimpurity scattering model in both the paramagnetic and the ferromagnetic temperature regions. Quantitative analysis of the Ga1-xMnxAs MR data yields the value of the p-d exchange energy as |N0β| ≈ 1.6eV.

Original languageEnglish
Pages (from-to)6256-6259
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number10
Publication statusPublished - 2003 Oct

Keywords

  • Ferromagnetic
  • GaMnAs
  • Magnetoresistance
  • P-d exchange energy
  • Semiconductors

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Yuldashev, S. U., Im, H., Yalishev, V. S., Park, C. S., Kang, T. W., Lee, S., Sasaki, Y., Liu, X., & Furdyna, J. K. (2003). Magnetoresistance of Ga1-xMnxAs Epitaxial Layers Doped by Be. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(10), 6256-6259.