Magnetostatic effects in giant magnetoresistive spin-valve devices

R. W. Cross, Young K. Kim, J. O. Oti, S. E. Russek

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We report on magnetotransport measurements of spin valve films that have been fabricated into rectangular stripes with Au current leads. The spin valve films consisted of two magnetic NiFe layers separated by a nonmagnetic Cu layer. The top NiFe layer was magnetically pinned by a FeMn layer with an effective pinning field of 12 kA/m (150 Oe). After device fabrication, the transport properties changed dramatically as the stripe-height of the device was decreased below 1 μm. Internal demagnetizing fields and magnetostatic interactions between the magnetic layers dominated the magnetic response. These interactions change the biasing point and the linearity, and cause a decrease in sensitivity to field changes. We have developed a simple single-domain rotation model that includes magnetostatic, anisotropy, and exchange interactions to describe the magnetic behavior, from which we calculate the transport response.

Original languageEnglish
Pages (from-to)3935-3937
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number25
DOIs
Publication statusPublished - 1996 Dec 16
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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