Magnetostriction of Tb-Fe-(B) Thin Films Fabricated by RF Magnetron Sputtering

Sang Ho Lim, Y. S. Choi, S. H. Han, H. J. Kim, T. Shw, H. Fujimorit

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20 Citations (Scopus)

Abstract

The magnetostriction of TbFe and TbFeB thin films is systematically investigated over a wide composition range from 40.2 to 68.1 at.% Tb for the Bfree alloys and from 44.1 to 66.6 at.% Tb for the B containing thin films. The films were fabricated by rf magnetron sputtering. The microstructure mainly consists of an amorphous phase at low Tb contents and, at high Tb contents, a mixture of an amorphous phase and an a Tb phase. Excellent magnetostrictive characteristics, particularly at low magnetic fields, are achieved in both TbFe and TbFeB thin films; for example, a magnetostriction of 138 ppm is obtained in a TbFeB thin film at a magnetic field as low as 30 Oe. These excellent magnetostrictive properties of the present thin films are supported by the excellent magnetic softness, the coercivity below 10 Oe and a typical squared-loop shape with the saturation field as low as 1 kOe. It is considered that, due to the excellent low field magnetostrictive characteristics, the present TbFe based magnetostrictive thin films are suitable for Si based microdevices.

Original languageEnglish
Pages (from-to)3940-3942
Number of pages3
JournalIEEE Transactions on Magnetics
Volume33
Issue number5 PART 2
DOIs
Publication statusPublished - 1997 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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    Lim, S. H., Choi, Y. S., Han, S. H., Kim, H. J., Shw, T., & Fujimorit, H. (1997). Magnetostriction of Tb-Fe-(B) Thin Films Fabricated by RF Magnetron Sputtering. IEEE Transactions on Magnetics, 33(5 PART 2), 3940-3942. https://doi.org/10.1109/20.619622