Magnetostriction of Tb-Fe-(B) Thin Films Fabricated by RF Magnetron Sputtering

Sang Ho Lim, Y. S. Choi, S. H. Han, H. J. Kim, T. Shw, H. Fujimorit

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The magnetostriction of TbFe and TbFeB thin films is systematically investigated over a wide composition range from 40.2 to 68.1 at.% Tb for the Bfree alloys and from 44.1 to 66.6 at.% Tb for the B containing thin films. The films were fabricated by rf magnetron sputtering. The microstructure mainly consists of an amorphous phase at low Tb contents and, at high Tb contents, a mixture of an amorphous phase and an a Tb phase. Excellent magnetostrictive characteristics, particularly at low magnetic fields, are achieved in both TbFe and TbFeB thin films; for example, a magnetostriction of 138 ppm is obtained in a TbFeB thin film at a magnetic field as low as 30 Oe. These excellent magnetostrictive properties of the present thin films are supported by the excellent magnetic softness, the coercivity below 10 Oe and a typical squared-loop shape with the saturation field as low as 1 kOe. It is considered that, due to the excellent low field magnetostrictive characteristics, the present TbFe based magnetostrictive thin films are suitable for Si based microdevices.

Original languageEnglish
Pages (from-to)3940-3942
Number of pages3
JournalIEEE Transactions on Magnetics
Volume33
Issue number5 PART 2
DOIs
Publication statusPublished - 1997 Dec 1
Externally publishedYes

Fingerprint

Magnetostriction
magnetostriction
Magnetron sputtering
magnetron sputtering
Thin films
thin films
Magnetic fields
softness
Coercive force
magnetic fields
coercivity
saturation
microstructure
Microstructure
Chemical analysis

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Lim, S. H., Choi, Y. S., Han, S. H., Kim, H. J., Shw, T., & Fujimorit, H. (1997). Magnetostriction of Tb-Fe-(B) Thin Films Fabricated by RF Magnetron Sputtering. IEEE Transactions on Magnetics, 33(5 PART 2), 3940-3942. https://doi.org/10.1109/20.619622

Magnetostriction of Tb-Fe-(B) Thin Films Fabricated by RF Magnetron Sputtering. / Lim, Sang Ho; Choi, Y. S.; Han, S. H.; Kim, H. J.; Shw, T.; Fujimorit, H.

In: IEEE Transactions on Magnetics, Vol. 33, No. 5 PART 2, 01.12.1997, p. 3940-3942.

Research output: Contribution to journalArticle

Lim, SH, Choi, YS, Han, SH, Kim, HJ, Shw, T & Fujimorit, H 1997, 'Magnetostriction of Tb-Fe-(B) Thin Films Fabricated by RF Magnetron Sputtering', IEEE Transactions on Magnetics, vol. 33, no. 5 PART 2, pp. 3940-3942. https://doi.org/10.1109/20.619622
Lim, Sang Ho ; Choi, Y. S. ; Han, S. H. ; Kim, H. J. ; Shw, T. ; Fujimorit, H. / Magnetostriction of Tb-Fe-(B) Thin Films Fabricated by RF Magnetron Sputtering. In: IEEE Transactions on Magnetics. 1997 ; Vol. 33, No. 5 PART 2. pp. 3940-3942.
@article{0fd054dbd24e458f8a40f1baa78e0047,
title = "Magnetostriction of Tb-Fe-(B) Thin Films Fabricated by RF Magnetron Sputtering",
abstract = "The magnetostriction of TbFe and TbFeB thin films is systematically investigated over a wide composition range from 40.2 to 68.1 at.{\%} Tb for the Bfree alloys and from 44.1 to 66.6 at.{\%} Tb for the B containing thin films. The films were fabricated by rf magnetron sputtering. The microstructure mainly consists of an amorphous phase at low Tb contents and, at high Tb contents, a mixture of an amorphous phase and an a Tb phase. Excellent magnetostrictive characteristics, particularly at low magnetic fields, are achieved in both TbFe and TbFeB thin films; for example, a magnetostriction of 138 ppm is obtained in a TbFeB thin film at a magnetic field as low as 30 Oe. These excellent magnetostrictive properties of the present thin films are supported by the excellent magnetic softness, the coercivity below 10 Oe and a typical squared-loop shape with the saturation field as low as 1 kOe. It is considered that, due to the excellent low field magnetostrictive characteristics, the present TbFe based magnetostrictive thin films are suitable for Si based microdevices.",
author = "Lim, {Sang Ho} and Choi, {Y. S.} and Han, {S. H.} and Kim, {H. J.} and T. Shw and H. Fujimorit",
year = "1997",
month = "12",
day = "1",
doi = "10.1109/20.619622",
language = "English",
volume = "33",
pages = "3940--3942",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5 PART 2",

}

TY - JOUR

T1 - Magnetostriction of Tb-Fe-(B) Thin Films Fabricated by RF Magnetron Sputtering

AU - Lim, Sang Ho

AU - Choi, Y. S.

AU - Han, S. H.

AU - Kim, H. J.

AU - Shw, T.

AU - Fujimorit, H.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - The magnetostriction of TbFe and TbFeB thin films is systematically investigated over a wide composition range from 40.2 to 68.1 at.% Tb for the Bfree alloys and from 44.1 to 66.6 at.% Tb for the B containing thin films. The films were fabricated by rf magnetron sputtering. The microstructure mainly consists of an amorphous phase at low Tb contents and, at high Tb contents, a mixture of an amorphous phase and an a Tb phase. Excellent magnetostrictive characteristics, particularly at low magnetic fields, are achieved in both TbFe and TbFeB thin films; for example, a magnetostriction of 138 ppm is obtained in a TbFeB thin film at a magnetic field as low as 30 Oe. These excellent magnetostrictive properties of the present thin films are supported by the excellent magnetic softness, the coercivity below 10 Oe and a typical squared-loop shape with the saturation field as low as 1 kOe. It is considered that, due to the excellent low field magnetostrictive characteristics, the present TbFe based magnetostrictive thin films are suitable for Si based microdevices.

AB - The magnetostriction of TbFe and TbFeB thin films is systematically investigated over a wide composition range from 40.2 to 68.1 at.% Tb for the Bfree alloys and from 44.1 to 66.6 at.% Tb for the B containing thin films. The films were fabricated by rf magnetron sputtering. The microstructure mainly consists of an amorphous phase at low Tb contents and, at high Tb contents, a mixture of an amorphous phase and an a Tb phase. Excellent magnetostrictive characteristics, particularly at low magnetic fields, are achieved in both TbFe and TbFeB thin films; for example, a magnetostriction of 138 ppm is obtained in a TbFeB thin film at a magnetic field as low as 30 Oe. These excellent magnetostrictive properties of the present thin films are supported by the excellent magnetic softness, the coercivity below 10 Oe and a typical squared-loop shape with the saturation field as low as 1 kOe. It is considered that, due to the excellent low field magnetostrictive characteristics, the present TbFe based magnetostrictive thin films are suitable for Si based microdevices.

UR - http://www.scopus.com/inward/record.url?scp=0031221614&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031221614&partnerID=8YFLogxK

U2 - 10.1109/20.619622

DO - 10.1109/20.619622

M3 - Article

AN - SCOPUS:0031221614

VL - 33

SP - 3940

EP - 3942

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 5 PART 2

ER -