Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing

In Chang Chu, Min Sung Song, Byong Sun Chun, Seong Rae Lee, Young-geun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Magnetic tunnel junction (MTJ) structures based on underlayer (CoNbZr)/bufferlayer (CoFe)/antiferromagnet (IrMn)/pinned layer (CoFe)/tunnel barrier (AlOx)/free layer (CoFe)/capping (CoNbZr) have been prepared to investigate thermal degradation of magnetoresistive responses. Some junctions possess a nano-oxide layer (NOL) inside either in the underlayer or bufferlayer. The main purpose of the NOL inclusion was to control interdiffusion path of Mn from the antiferromagnet so that improved thermal stability could be achieved. The MTJs with NOLs were found to have reduced interfacial roughness, resulting in improved tunneling magnetoresistance (TMR) and reduced interlayer coupling field. We also confirmed that the NOL effectively suppressed the Mn interdiffusion toward the tunnel barrier by dragging Mn atoms toward NOL during annealing.

Original languageEnglish
Pages (from-to)348-351
Number of pages4
JournalSolid State Communications
Volume135
Issue number6
DOIs
Publication statusPublished - 2005 Aug 1

Fingerprint

Galvanomagnetic effects
Tunnel junctions
tunnel junctions
Oxides
Annealing
annealing
oxides
Tunnels
Tunnelling magnetoresistance
tunnels
Pyrolysis
Thermodynamic stability
Surface roughness
thermal degradation
Atoms
interlayers
thermal stability
roughness
inclusions
atoms

Keywords

  • A. Nano-oxide layer
  • D. Interlayer diffusion
  • D. Magnetic tunnel junction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Magnetotransport and interdiffusion characteristics of magnetic tunnel junctions comprising nano-oxide layers upon exposure to postdeposition annealing. / Chu, In Chang; Song, Min Sung; Chun, Byong Sun; Lee, Seong Rae; Kim, Young-geun.

In: Solid State Communications, Vol. 135, No. 6, 01.08.2005, p. 348-351.

Research output: Contribution to journalArticle

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AU - Chu, In Chang

AU - Song, Min Sung

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AU - Lee, Seong Rae

AU - Kim, Young-geun

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AB - Magnetic tunnel junction (MTJ) structures based on underlayer (CoNbZr)/bufferlayer (CoFe)/antiferromagnet (IrMn)/pinned layer (CoFe)/tunnel barrier (AlOx)/free layer (CoFe)/capping (CoNbZr) have been prepared to investigate thermal degradation of magnetoresistive responses. Some junctions possess a nano-oxide layer (NOL) inside either in the underlayer or bufferlayer. The main purpose of the NOL inclusion was to control interdiffusion path of Mn from the antiferromagnet so that improved thermal stability could be achieved. The MTJs with NOLs were found to have reduced interfacial roughness, resulting in improved tunneling magnetoresistance (TMR) and reduced interlayer coupling field. We also confirmed that the NOL effectively suppressed the Mn interdiffusion toward the tunnel barrier by dragging Mn atoms toward NOL during annealing.

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