Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction

W. J. Hwang, H. J. Lee, K. I. Lee, J. M. Lee, J. Y. Chang, S. H. Han, Young-geun Kim, W. Y. Lee, M. W. Shin

Research output: Contribution to journalArticle

Abstract

The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 - 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

Original languageEnglish
Pages (from-to)1081-1084
Number of pages4
JournalMaterials Science Forum
Volume449-452
Issue numberII
Publication statusPublished - 2004 Jul 26

Fingerprint

Galvanomagnetic effects
Magnetization
injection
Magnetic fields
Magnetoresistance
magnetization
magnetic fields
Electrons
electrons

Keywords

  • Hybrid ferromagnetic metal/semiconductor
  • Spin injection
  • Spin-polarized transport

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Hwang, W. J., Lee, H. J., Lee, K. I., Lee, J. M., Chang, J. Y., Han, S. H., ... Shin, M. W. (2004). Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction. Materials Science Forum, 449-452(II), 1081-1084.

Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction. / Hwang, W. J.; Lee, H. J.; Lee, K. I.; Lee, J. M.; Chang, J. Y.; Han, S. H.; Kim, Young-geun; Lee, W. Y.; Shin, M. W.

In: Materials Science Forum, Vol. 449-452, No. II, 26.07.2004, p. 1081-1084.

Research output: Contribution to journalArticle

Hwang, WJ, Lee, HJ, Lee, KI, Lee, JM, Chang, JY, Han, SH, Kim, Y, Lee, WY & Shin, MW 2004, 'Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction', Materials Science Forum, vol. 449-452, no. II, pp. 1081-1084.
Hwang WJ, Lee HJ, Lee KI, Lee JM, Chang JY, Han SH et al. Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction. Materials Science Forum. 2004 Jul 26;449-452(II):1081-1084.
Hwang, W. J. ; Lee, H. J. ; Lee, K. I. ; Lee, J. M. ; Chang, J. Y. ; Han, S. H. ; Kim, Young-geun ; Lee, W. Y. ; Shin, M. W. / Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction. In: Materials Science Forum. 2004 ; Vol. 449-452, No. II. pp. 1081-1084.
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AU - Lee, K. I.

AU - Lee, J. M.

AU - Chang, J. Y.

AU - Han, S. H.

AU - Kim, Young-geun

AU - Lee, W. Y.

AU - Shin, M. W.

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AB - The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 - 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

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