Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction

W. J. Hwang, H. J. Lee, K. I. Lee, J. M. Lee, J. Y. Chang, S. H. Han, Y. K. Kim, W. Y. Lee, M. W. Shin

Research output: Contribution to journalConference article

Abstract

The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 - 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

Original languageEnglish
Pages (from-to)1081-1084
Number of pages4
JournalMaterials Science Forum
Volume449-452
Issue numberII
Publication statusPublished - 2004
EventDesigning, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of
Duration: 2003 Nov 52003 Nov 8

Keywords

  • Hybrid ferromagnetic metal/semiconductor
  • Spin injection
  • Spin-polarized transport

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Hwang, W. J., Lee, H. J., Lee, K. I., Lee, J. M., Chang, J. Y., Han, S. H., Kim, Y. K., Lee, W. Y., & Shin, M. W. (2004). Magnetotransport properties in a lateral spin-injection device with an ferromagnetic/Si/ferromagnetic junction. Materials Science Forum, 449-452(II), 1081-1084.