Magnetotransport properties of Fe/GaAlAs/GaMnAs hybrid magnetic trilayer structures

Taehee Yoo; Sanghoon Lee; Xinyu Liu; Jacek K. Furdyna; Dong Uk Lee; Eun Kyu Kim

doi:10.1063/1.4863375

Magnetotransport properties of Fe/GaAlAs/GaMnAs hybrid magnetic trilayer structures

Taehee Yoo, Sanghoon Lee, Xinyu Liu, Jacek K. Furdyna, Dong Uk Lee, Eun Kyu Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We discuss tunneling magnetoresistance (TMR) phenomena observed in hybrid magnetic tunnel junctions (MTJs) fabricated from a Fe/GaAlAs/GaMnAs trilayer. The TMR clearly shows abrupt changes of resistance that depends on the relative alignments of magnetization in the two magnetic layers comprising the MTJ. The TMR ratio of the structure strongly depends on the bias voltage, reaching values up to ~45% when the bias voltage is low (~0.2 mV). In addition, the device exhibits intermediate TMR values, which correspond to non-collinear alignments of magnetization in the GaMnAs and the Fe layers. Such alignments are possible due to the presence of two magnetic easy axes both in both magnetic layers originating from their strong cubic magnetic anisotropy. The TMR states realized in such Fe/GaAlAs/GaMnAs MTJs are excellent candidates for use in multi-valued memory storage devices.

Original language	English
Article number	17C715
Journal	Journal of Applied Physics
Volume	115
Issue number	17
DOIs	https://doi.org/10.1063/1.4863375
Publication status	Published - 2014 May 7

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4863375

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@article{f631a7d0e9fb4b8580af8eef4f3a4ffd,

title = "Magnetotransport properties of Fe/GaAlAs/GaMnAs hybrid magnetic trilayer structures",

abstract = "We discuss tunneling magnetoresistance (TMR) phenomena observed in hybrid magnetic tunnel junctions (MTJs) fabricated from a Fe/GaAlAs/GaMnAs trilayer. The TMR clearly shows abrupt changes of resistance that depends on the relative alignments of magnetization in the two magnetic layers comprising the MTJ. The TMR ratio of the structure strongly depends on the bias voltage, reaching values up to ~45% when the bias voltage is low (~0.2 mV). In addition, the device exhibits intermediate TMR values, which correspond to non-collinear alignments of magnetization in the GaMnAs and the Fe layers. Such alignments are possible due to the presence of two magnetic easy axes both in both magnetic layers originating from their strong cubic magnetic anisotropy. The TMR states realized in such Fe/GaAlAs/GaMnAs MTJs are excellent candidates for use in multi-valued memory storage devices.",

author = "Taehee Yoo and Sanghoon Lee and Xinyu Liu and Furdyna, {Jacek K.} and Lee, {Dong Uk} and Kim, {Eun Kyu}",

note = "Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Science, ICT and Future Planning (No. 2013K000311), by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2013R1A1A2004505), and by the National Science Foundation Grant No. DMR10-05851. Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC",

year = "2014",

month = may,

day = "7",

doi = "10.1063/1.4863375",

language = "English",

volume = "115",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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TY - JOUR

T1 - Magnetotransport properties of Fe/GaAlAs/GaMnAs hybrid magnetic trilayer structures

AU - Yoo, Taehee

AU - Lee, Sanghoon

AU - Liu, Xinyu

AU - Furdyna, Jacek K.

AU - Lee, Dong Uk

AU - Kim, Eun Kyu

N1 - Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Science, ICT and Future Planning (No. 2013K000311), by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (No. 2013R1A1A2004505), and by the National Science Foundation Grant No. DMR10-05851. Publisher Copyright: © 2014 AIP Publishing LLC

PY - 2014/5/7

Y1 - 2014/5/7

N2 - We discuss tunneling magnetoresistance (TMR) phenomena observed in hybrid magnetic tunnel junctions (MTJs) fabricated from a Fe/GaAlAs/GaMnAs trilayer. The TMR clearly shows abrupt changes of resistance that depends on the relative alignments of magnetization in the two magnetic layers comprising the MTJ. The TMR ratio of the structure strongly depends on the bias voltage, reaching values up to ~45% when the bias voltage is low (~0.2 mV). In addition, the device exhibits intermediate TMR values, which correspond to non-collinear alignments of magnetization in the GaMnAs and the Fe layers. Such alignments are possible due to the presence of two magnetic easy axes both in both magnetic layers originating from their strong cubic magnetic anisotropy. The TMR states realized in such Fe/GaAlAs/GaMnAs MTJs are excellent candidates for use in multi-valued memory storage devices.

AB - We discuss tunneling magnetoresistance (TMR) phenomena observed in hybrid magnetic tunnel junctions (MTJs) fabricated from a Fe/GaAlAs/GaMnAs trilayer. The TMR clearly shows abrupt changes of resistance that depends on the relative alignments of magnetization in the two magnetic layers comprising the MTJ. The TMR ratio of the structure strongly depends on the bias voltage, reaching values up to ~45% when the bias voltage is low (~0.2 mV). In addition, the device exhibits intermediate TMR values, which correspond to non-collinear alignments of magnetization in the GaMnAs and the Fe layers. Such alignments are possible due to the presence of two magnetic easy axes both in both magnetic layers originating from their strong cubic magnetic anisotropy. The TMR states realized in such Fe/GaAlAs/GaMnAs MTJs are excellent candidates for use in multi-valued memory storage devices.

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U2 - 10.1063/1.4863375

DO - 10.1063/1.4863375

M3 - Article

AN - SCOPUS:84916224642

SN - 0021-8979

VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 17

M1 - 17C715

ER -

Magnetotransport properties of Fe/GaAlAs/GaMnAs hybrid magnetic trilayer structures

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