Magnetotransport properties of GaMnAs based trilayer structures with different thicknesses of InGaAs spacer layer

Hakjoon Lee, Sunjae Chung, Sang Hoon Lee, X. Liu, J. K. Furdyna

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5 Citations (Scopus)

Abstract

Magnetotransport properties of GaMnAsInGaAsGaMnAs trilayer structures have been investigated by Hall measurements. The samples in the series are identical except for the InGaAs spacer thickness, which varies from 5 to 50 nm. The Hall measurements revealed the systematic change of magnetic easy axes from in-plane to out-of plane with increasing InGaAs spacer thickness. Such dependence of magnetic easy axes of the trilayer systems was understood in terms of the magnetic anisotropy change with spacer thickness. In the magnetization reversal process, various configurations of magnetization between the two GaMnAs layers were observed both in in-plane and out-of plane samples by the planar and the anomalous Hall effects.

Original languageEnglish
Article number07C505
JournalJournal of Applied Physics
Volume105
Issue number7
DOIs
Publication statusPublished - 2009 Apr 27

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spacers
magnetization
Hall effect
anisotropy
configurations

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Magnetotransport properties of GaMnAs based trilayer structures with different thicknesses of InGaAs spacer layer. / Lee, Hakjoon; Chung, Sunjae; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Journal of Applied Physics, Vol. 105, No. 7, 07C505, 27.04.2009.

Research output: Contribution to journalArticle

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