Magnetotransport properties of GaMnAs/ ZnMnSe double-layer systems

I. S. Choi; S. H. Nam; H. J. Lee; S. Lee; S. Y. An; W. L. Lim; X. Liu; J. Furdyna

Magnetotransport properties of GaMnAs/ ZnMnSe double-layer systems

I. S. Choi, S. H. Nam, H. J. Lee, S. Lee, S. Y. An, W. L. Lim, X. Liu, J. Furdyna

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated the magnetotransport properties of a series of magnetic semiconductor double layer structures consisting of 300 nm thick Ga _1-xMn _xAs and 150 nm thick Zn _1-yMn _ySe layers. In this series, Mn concentration in the top Zn _1-yMn _ySe varies from 28 - 42 %, while it is fixed at 5% in the Ga _1-xMn _xAs. The transport measurement of the bottom Ga _1-xMn _xAs was carried out on the Hall bar prepared by using photolithography and selective etching processes. The temperature scan of resistivity data showed that the Curie temperature (T _C) of the Ga _1-xMn _xAs is increased in the form of double layers as compared to bare Ga _1-xMn _xAs. Furthermore, we have observed a systematic change of positive magnetoresistance (MR) in the Ga _1-xMn _xAs, depending on the Mn concentration of the Zn _1-yMn _ySe overlayer. This observation clearly indicates that neighboring magnetic layers significantly influence the magnetotransport properties of the Ga _1-xMn _xAs.

Original language	English
Pages (from-to)	S554-S558
Journal	Journal of the Korean Physical Society
Volume	45
Issue number	SUPPL.
Publication status	Published - 2004 Dec
Externally published	Yes

Keywords

Dilute magnetic semiconductor GaMnAs
Magneto-resistance

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

@article{3b94651c259a432f97f83dfbcd80b4df,

title = "Magnetotransport properties of GaMnAs/ ZnMnSe double-layer systems",

abstract = "We have investigated the magnetotransport properties of a series of magnetic semiconductor double layer structures consisting of 300 nm thick Ga 1-xMn xAs and 150 nm thick Zn 1-yMn ySe layers. In this series, Mn concentration in the top Zn 1-yMn ySe varies from 28 - 42 %, while it is fixed at 5% in the Ga 1-xMn xAs. The transport measurement of the bottom Ga 1-xMn xAs was carried out on the Hall bar prepared by using photolithography and selective etching processes. The temperature scan of resistivity data showed that the Curie temperature (T C) of the Ga 1-xMn xAs is increased in the form of double layers as compared to bare Ga 1-xMn xAs. Furthermore, we have observed a systematic change of positive magnetoresistance (MR) in the Ga 1-xMn xAs, depending on the Mn concentration of the Zn 1-yMn ySe overlayer. This observation clearly indicates that neighboring magnetic layers significantly influence the magnetotransport properties of the Ga 1-xMn xAs.",

keywords = "Dilute magnetic semiconductor GaMnAs, Magneto-resistance",

author = "Choi, {I. S.} and Nam, {S. H.} and Lee, {H. J.} and S. Lee and An, {S. Y.} and Lim, {W. L.} and X. Liu and J. Furdyna",

year = "2004",

month = dec,

language = "English",

volume = "45",

pages = "S554--S558",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL.",

}

TY - JOUR

T1 - Magnetotransport properties of GaMnAs/ ZnMnSe double-layer systems

AU - Choi, I. S.

AU - Nam, S. H.

AU - Lee, H. J.

AU - Lee, S.

AU - An, S. Y.

AU - Lim, W. L.

AU - Liu, X.

AU - Furdyna, J.

PY - 2004/12

Y1 - 2004/12

N2 - We have investigated the magnetotransport properties of a series of magnetic semiconductor double layer structures consisting of 300 nm thick Ga 1-xMn xAs and 150 nm thick Zn 1-yMn ySe layers. In this series, Mn concentration in the top Zn 1-yMn ySe varies from 28 - 42 %, while it is fixed at 5% in the Ga 1-xMn xAs. The transport measurement of the bottom Ga 1-xMn xAs was carried out on the Hall bar prepared by using photolithography and selective etching processes. The temperature scan of resistivity data showed that the Curie temperature (T C) of the Ga 1-xMn xAs is increased in the form of double layers as compared to bare Ga 1-xMn xAs. Furthermore, we have observed a systematic change of positive magnetoresistance (MR) in the Ga 1-xMn xAs, depending on the Mn concentration of the Zn 1-yMn ySe overlayer. This observation clearly indicates that neighboring magnetic layers significantly influence the magnetotransport properties of the Ga 1-xMn xAs.

AB - We have investigated the magnetotransport properties of a series of magnetic semiconductor double layer structures consisting of 300 nm thick Ga 1-xMn xAs and 150 nm thick Zn 1-yMn ySe layers. In this series, Mn concentration in the top Zn 1-yMn ySe varies from 28 - 42 %, while it is fixed at 5% in the Ga 1-xMn xAs. The transport measurement of the bottom Ga 1-xMn xAs was carried out on the Hall bar prepared by using photolithography and selective etching processes. The temperature scan of resistivity data showed that the Curie temperature (T C) of the Ga 1-xMn xAs is increased in the form of double layers as compared to bare Ga 1-xMn xAs. Furthermore, we have observed a systematic change of positive magnetoresistance (MR) in the Ga 1-xMn xAs, depending on the Mn concentration of the Zn 1-yMn ySe overlayer. This observation clearly indicates that neighboring magnetic layers significantly influence the magnetotransport properties of the Ga 1-xMn xAs.

KW - Dilute magnetic semiconductor GaMnAs

KW - Magneto-resistance

UR - http://www.scopus.com/inward/record.url?scp=12744281821&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:12744281821

VL - 45

SP - S554-S558

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL.

ER -

Magnetotransport properties of GaMnAs/ ZnMnSe double-layer systems

Abstract

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this