Magnetotransport properties of GaMnAs/ ZnMnSe double-layer systems

I. S. Choi, S. H. Nam, H. J. Lee, S. Lee, S. Y. An, W. L. Lim, X. Liu, J. Furdyna

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1 Citation (Scopus)

Abstract

We have investigated the magnetotransport properties of a series of magnetic semiconductor double layer structures consisting of 300 nm thick Ga 1-xMn xAs and 150 nm thick Zn 1-yMn ySe layers. In this series, Mn concentration in the top Zn 1-yMn ySe varies from 28 - 42 %, while it is fixed at 5% in the Ga 1-xMn xAs. The transport measurement of the bottom Ga 1-xMn xAs was carried out on the Hall bar prepared by using photolithography and selective etching processes. The temperature scan of resistivity data showed that the Curie temperature (T C) of the Ga 1-xMn xAs is increased in the form of double layers as compared to bare Ga 1-xMn xAs. Furthermore, we have observed a systematic change of positive magnetoresistance (MR) in the Ga 1-xMn xAs, depending on the Mn concentration of the Zn 1-yMn ySe overlayer. This observation clearly indicates that neighboring magnetic layers significantly influence the magnetotransport properties of the Ga 1-xMn xAs.

Original languageEnglish
Pages (from-to)S554-S558
JournalJournal of the Korean Physical Society
Volume45
Issue numberSUPPL.
Publication statusPublished - 2004 Dec
Externally publishedYes

Keywords

  • Dilute magnetic semiconductor GaMnAs
  • Magneto-resistance

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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