Manipulation of free-layer bias field in giant-magnetoresistance spin valve by controlling pinned-layer thickness

Si Nyeon Kim, Ku Hoon Chung, Jun Woo Choi, Sang Ho Lim

Research output: Contribution to journalArticle

Abstract

The manipulation of the bias field of the free-layer in giant magnetoresistance spin-valves is of great importance in sensor applications because this feature dominantly affects the low-field sensitivity of magnetoresistance. In this study, it is demonstrated that the bias field of the free-layer can be manipulated by controlling the thickness of the pinned-layer deposited afterward. The key to success is the utilization of the magnetostatic interactions between the free-poles formed on the Néel walls in both free- and pinned-layers. Magnetostatic interactions play a role in stabilizing the antiparallel magnetization state and hence in suppressing the magnetization switching of the free-layer from an antiparallel to a parallel state. A nearly zero bias field is achieved for a Ta-buffered sample with a pinned-layer thickness of 1.75 nm, where a very high low-field sensitivity of 7.7 mV/mA·Oe is obtained.

Original languageEnglish
Article number153727
JournalJournal of Alloys and Compounds
Volume823
DOIs
Publication statusPublished - 2020 May 15

Fingerprint

Giant magnetoresistance
Magnetostatics
Magnetization
Magnetoresistance
Poles
Sensors

Keywords

  • Crystal growth
  • Domain structure
  • Magnetic measurements
  • Magnetic thin films and multilayers
  • Magnetoresistance

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Manipulation of free-layer bias field in giant-magnetoresistance spin valve by controlling pinned-layer thickness. / Kim, Si Nyeon; Chung, Ku Hoon; Choi, Jun Woo; Lim, Sang Ho.

In: Journal of Alloys and Compounds, Vol. 823, 153727, 15.05.2020.

Research output: Contribution to journalArticle

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N2 - The manipulation of the bias field of the free-layer in giant magnetoresistance spin-valves is of great importance in sensor applications because this feature dominantly affects the low-field sensitivity of magnetoresistance. In this study, it is demonstrated that the bias field of the free-layer can be manipulated by controlling the thickness of the pinned-layer deposited afterward. The key to success is the utilization of the magnetostatic interactions between the free-poles formed on the Néel walls in both free- and pinned-layers. Magnetostatic interactions play a role in stabilizing the antiparallel magnetization state and hence in suppressing the magnetization switching of the free-layer from an antiparallel to a parallel state. A nearly zero bias field is achieved for a Ta-buffered sample with a pinned-layer thickness of 1.75 nm, where a very high low-field sensitivity of 7.7 mV/mA·Oe is obtained.

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