The electric-field-induced spin-orbit interaction (SOI) has been examined in double-sided doped quantum-well (QW) structures in which two different QWs of In0.53Ga0.47As (16 nm) or In0.53Ga0.47As (8 nm)/InAs (3 nm)/In0.53Ga0.47As (8 nm) are employed. Two separated carrier supply layers of different doping concentrations generate an asymmetric potential gradient in the QW, resulting in a structure-induced Rashba spin-splitting. By analyzing the Shubnikov-de Hass oscillation, the two different QWs are found to represent opposite SOI parameter (α) variations with respect to the gate electric field, which can be explained by the conduction band potential gradient and the charge distribution of the QWs. The InAs-inserted In0.53Ga0.47As QW exhibits an exclusively negative gradient while the In0.53Ga0.47As QW exhibits positive gradients on the side of the gate electrode.
- Gate modulation
- Quantum-well structure
- Rashba spin-orbit interaction
- Shubnikov-de Hass oscillation
- Spin field effect transistor
ASJC Scopus subject areas
- Physics and Astronomy(all)