Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer

Jeongwoo Hwang, Kwanjae Lee, Jin Soo Kim, Cheul Ro Lee, In Hwan Lee, Kwangjae Lee, Jin Hong Lee, Jae Young Leem, Jong Su Kim, Jae Hyun Ryou, Russell D. Dupuis

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the influence of an InN layer inserted between InGaN and GaN on the optical properties of InGaN/GaN light emitting diode (LED). The emission wavelength of the InGaN/GaN LED with the InN layer was 459 nm at 10 K, which was red-shifted by 6 nm from that of the LED without the insertion layer (reference LED). The peak position of the reference LED subjected to thermal treatment at 825°C was blue-shifted by 3.5 nm compared to that of the as-grown sample due to the structural variation of indium (In)-related features in InGaN/GaN quantum wells (QWs) and inter-diffusion of In and gallium (Ga) at the interface. However, the emission peak for the InGaN/GaN LED with the InN layer was red-shifted with increasing annealing temperatures. This result can be explained by the additional introduction of In to InGaN/GaN QWs and the reduction in the probability for Ga atoms at the GaN barrier to diffuse into InGaN through the InN layer.

Original languageEnglish
Pages (from-to)109-113
Number of pages5
JournalJournal of Crystal Growth
Volume370
DOIs
Publication statusPublished - 2013 May 1
Externally publishedYes

Keywords

  • A1. Red-shift
  • A1. Thermal treatment
  • B1. InGaN/GaN LED
  • B1. InN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer'. Together they form a unique fingerprint.

  • Cite this

    Hwang, J., Lee, K., Kim, J. S., Lee, C. R., Lee, I. H., Lee, K., Lee, J. H., Leem, J. Y., Kim, J. S., Ryou, J. H., & Dupuis, R. D. (2013). Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer. Journal of Crystal Growth, 370, 109-113. https://doi.org/10.1016/j.jcrysgro.2012.08.049