Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer

Jeongwoo Hwang, Kwanjae Lee, Jin Soo Kim, Cheul Ro Lee, In-Hwan Lee, Kwangjae Lee, Jin Hong Lee, Jae Young Leem, Jong Su Kim, Jae Hyun Ryou, Russell D. Dupuis

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the influence of an InN layer inserted between InGaN and GaN on the optical properties of InGaN/GaN light emitting diode (LED). The emission wavelength of the InGaN/GaN LED with the InN layer was 459 nm at 10 K, which was red-shifted by 6 nm from that of the LED without the insertion layer (reference LED). The peak position of the reference LED subjected to thermal treatment at 825°C was blue-shifted by 3.5 nm compared to that of the as-grown sample due to the structural variation of indium (In)-related features in InGaN/GaN quantum wells (QWs) and inter-diffusion of In and gallium (Ga) at the interface. However, the emission peak for the InGaN/GaN LED with the InN layer was red-shifted with increasing annealing temperatures. This result can be explained by the additional introduction of In to InGaN/GaN QWs and the reduction in the probability for Ga atoms at the GaN barrier to diffuse into InGaN through the InN layer.

Original languageEnglish
Pages (from-to)109-113
Number of pages5
JournalJournal of Crystal Growth
Volume370
DOIs
Publication statusPublished - 2013 May 1
Externally publishedYes

Keywords

  • A1. Red-shift
  • A1. Thermal treatment
  • B1. InGaN/GaN LED
  • B1. InN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Hwang, J., Lee, K., Kim, J. S., Lee, C. R., Lee, I-H., Lee, K., Lee, J. H., Leem, J. Y., Kim, J. S., Ryou, J. H., & Dupuis, R. D. (2013). Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer. Journal of Crystal Growth, 370, 109-113. https://doi.org/10.1016/j.jcrysgro.2012.08.049