Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer

Jeongwoo Hwang, Kwanjae Lee, Jin Soo Kim, Cheul Ro Lee, In-Hwan Lee, Kwangjae Lee, Jin Hong Lee, Jae Young Leem, Jong Su Kim, Jae Hyun Ryou, Russell D. Dupuis

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report the influence of an InN layer inserted between InGaN and GaN on the optical properties of InGaN/GaN light emitting diode (LED). The emission wavelength of the InGaN/GaN LED with the InN layer was 459 nm at 10 K, which was red-shifted by 6 nm from that of the LED without the insertion layer (reference LED). The peak position of the reference LED subjected to thermal treatment at 825°C was blue-shifted by 3.5 nm compared to that of the as-grown sample due to the structural variation of indium (In)-related features in InGaN/GaN quantum wells (QWs) and inter-diffusion of In and gallium (Ga) at the interface. However, the emission peak for the InGaN/GaN LED with the InN layer was red-shifted with increasing annealing temperatures. This result can be explained by the additional introduction of In to InGaN/GaN QWs and the reduction in the probability for Ga atoms at the GaN barrier to diffuse into InGaN through the InN layer.

Original languageEnglish
Pages (from-to)109-113
Number of pages5
JournalJournal of Crystal Growth
Volume370
DOIs
Publication statusPublished - 2013 May 1
Externally publishedYes

Fingerprint

Light emitting diodes
manipulators
light emitting diodes
Optical properties
optical properties
Indium
indium
Gallium
Semiconductor quantum wells
gallium
quantum wells
insertion
Heat treatment
Annealing
Wavelength
Atoms
annealing
wavelengths
atoms
Temperature

Keywords

  • A1. Red-shift
  • A1. Thermal treatment
  • B1. InGaN/GaN LED
  • B1. InN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer. / Hwang, Jeongwoo; Lee, Kwanjae; Kim, Jin Soo; Lee, Cheul Ro; Lee, In-Hwan; Lee, Kwangjae; Lee, Jin Hong; Leem, Jae Young; Kim, Jong Su; Ryou, Jae Hyun; Dupuis, Russell D.

In: Journal of Crystal Growth, Vol. 370, 01.05.2013, p. 109-113.

Research output: Contribution to journalArticle

Hwang, J, Lee, K, Kim, JS, Lee, CR, Lee, I-H, Lee, K, Lee, JH, Leem, JY, Kim, JS, Ryou, JH & Dupuis, RD 2013, 'Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer', Journal of Crystal Growth, vol. 370, pp. 109-113. https://doi.org/10.1016/j.jcrysgro.2012.08.049
Hwang, Jeongwoo ; Lee, Kwanjae ; Kim, Jin Soo ; Lee, Cheul Ro ; Lee, In-Hwan ; Lee, Kwangjae ; Lee, Jin Hong ; Leem, Jae Young ; Kim, Jong Su ; Ryou, Jae Hyun ; Dupuis, Russell D. / Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer. In: Journal of Crystal Growth. 2013 ; Vol. 370. pp. 109-113.
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AU - Lee, In-Hwan

AU - Lee, Kwangjae

AU - Lee, Jin Hong

AU - Leem, Jae Young

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AU - Dupuis, Russell D.

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N2 - We report the influence of an InN layer inserted between InGaN and GaN on the optical properties of InGaN/GaN light emitting diode (LED). The emission wavelength of the InGaN/GaN LED with the InN layer was 459 nm at 10 K, which was red-shifted by 6 nm from that of the LED without the insertion layer (reference LED). The peak position of the reference LED subjected to thermal treatment at 825°C was blue-shifted by 3.5 nm compared to that of the as-grown sample due to the structural variation of indium (In)-related features in InGaN/GaN quantum wells (QWs) and inter-diffusion of In and gallium (Ga) at the interface. However, the emission peak for the InGaN/GaN LED with the InN layer was red-shifted with increasing annealing temperatures. This result can be explained by the additional introduction of In to InGaN/GaN QWs and the reduction in the probability for Ga atoms at the GaN barrier to diffuse into InGaN through the InN layer.

AB - We report the influence of an InN layer inserted between InGaN and GaN on the optical properties of InGaN/GaN light emitting diode (LED). The emission wavelength of the InGaN/GaN LED with the InN layer was 459 nm at 10 K, which was red-shifted by 6 nm from that of the LED without the insertion layer (reference LED). The peak position of the reference LED subjected to thermal treatment at 825°C was blue-shifted by 3.5 nm compared to that of the as-grown sample due to the structural variation of indium (In)-related features in InGaN/GaN quantum wells (QWs) and inter-diffusion of In and gallium (Ga) at the interface. However, the emission peak for the InGaN/GaN LED with the InN layer was red-shifted with increasing annealing temperatures. This result can be explained by the additional introduction of In to InGaN/GaN QWs and the reduction in the probability for Ga atoms at the GaN barrier to diffuse into InGaN through the InN layer.

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