Mapping of magnetic anisotropy in strained ferromagnetic semiconductor GaMnAs films

Shinhee Kim, Hakjoon Lee, Taehee Yoo, Sangyeop Lee, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The effect of strain on the magnetic anisotropy of GaMnAs films has been systematically investigated using Hall effect measurements. The magnitude of the strain, which was caused by differences in the lattice constant between the GaMnAs film and buffer layer, was controlled by adjustment of the alloy composition in the GaInAs buffer layer. The in-plane and out-of-plane components of the magnetic anisotropy were obtained from the angular dependence of the planar Hall resistance and the anomalous Hall resistance, respectively. The anisotropy constants obtained allow us to construct a three-dimensional magnetic free energy surface, which provides a clear understanding of the transition behavior of the magnetization between the in-plane and out-of-plane direction in the GaMnAs films.

Original languageEnglish
Article number103911
JournalJournal of Applied Physics
Volume107
Issue number10
DOIs
Publication statusPublished - 2010 May 15

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Hall resistance
anisotropy
buffers
Hall effect
adjusting
free energy
magnetization

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Mapping of magnetic anisotropy in strained ferromagnetic semiconductor GaMnAs films. / Kim, Shinhee; Lee, Hakjoon; Yoo, Taehee; Lee, Sangyeop; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Journal of Applied Physics, Vol. 107, No. 10, 103911, 15.05.2010.

Research output: Contribution to journalArticle

Kim, Shinhee ; Lee, Hakjoon ; Yoo, Taehee ; Lee, Sangyeop ; Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / Mapping of magnetic anisotropy in strained ferromagnetic semiconductor GaMnAs films. In: Journal of Applied Physics. 2010 ; Vol. 107, No. 10.
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