Mapping potential landscapes of semiconducting carbon nanotubes with scanning gate microscopy

Yongsun Kim; Young Mu Oh; Ji Yong Park; Se Jong Kahng

doi:10.1088/0957-4484/18/47/475712

Mapping potential landscapes of semiconducting carbon nanotubes with scanning gate microscopy

Yongsun Kim, Young Mu Oh, Ji Yong Park, Se Jong Kahng

Department of Physics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Inhomogeneities in the energy bands of semiconducting carbon nanotubes (CNTs) are investigated with scanning gate microscopy (SGM). Non-uniform responses of a semiconducting CNT to a local electric field are found in SGM images which are obtained at the different depletion states of the CNT. The results indicate that local potential perturbations affect the transport characteristics of semiconducting CNTs significantly, especially near the off-state of the device.

Original language	English
Article number	475712
Journal	Nanotechnology
Volume	18
Issue number	47
DOIs	https://doi.org/10.1088/0957-4484/18/47/475712
Publication status	Published - 2007 Nov 28

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/18/47/475712

Cite this

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title = "Mapping potential landscapes of semiconducting carbon nanotubes with scanning gate microscopy",

abstract = "Inhomogeneities in the energy bands of semiconducting carbon nanotubes (CNTs) are investigated with scanning gate microscopy (SGM). Non-uniform responses of a semiconducting CNT to a local electric field are found in SGM images which are obtained at the different depletion states of the CNT. The results indicate that local potential perturbations affect the transport characteristics of semiconducting CNTs significantly, especially near the off-state of the device.",

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AU - Park, Ji Yong

AU - Kahng, Se Jong

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Y1 - 2007/11/28

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AB - Inhomogeneities in the energy bands of semiconducting carbon nanotubes (CNTs) are investigated with scanning gate microscopy (SGM). Non-uniform responses of a semiconducting CNT to a local electric field are found in SGM images which are obtained at the different depletion states of the CNT. The results indicate that local potential perturbations affect the transport characteristics of semiconducting CNTs significantly, especially near the off-state of the device.

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Mapping potential landscapes of semiconducting carbon nanotubes with scanning gate microscopy

Abstract

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