Mapping subsurface structure through atomically thin bismuth films on Si(1 1 1)-(7 × 7) with scanning tunneling microscope

Youngtek Oh, Jungpil Seo, Hwansoo Suh, Jung Seok Seo, Se-Jong Kahng, Young Kuk

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We performed scanning tunneling microscopy/spectroscopy measurements and spatial mapping of dI/dV on a few atomic layers of bismuth (Bi) film on a Si(1 1 1)-(7 × 7) substrate. At a Bi coverage of four monolayers (ML), local thickness variation could be measured due to thickness dependence of the surface states. At the nominal coverage of 6.5 ML, the dI/dV map reveals the subsurface structures, such as substrate step edges and buried Bi islands. The subsurface structures could be observed at specific biases, by both the electronic interference in a Bi film and the variation of the Bi surface states as a function of the film thickness.

Original languageEnglish
Pages (from-to)3352-3357
Number of pages6
JournalSurface Science
Volume602
Issue number21
DOIs
Publication statusPublished - 2008 Nov 1

Fingerprint

Bismuth
bismuth
Microscopes
microscopes
Scanning
scanning
Surface states
Monolayers
Scanning tunneling microscopy
Substrates
Film thickness
scanning tunneling microscopy
film thickness
Spectroscopy
interference
electronics
spectroscopy

Keywords

  • Bismuth film
  • Scanning tunneling microscopy and spectroscopy
  • Subsurface structure
  • Surface states

ASJC Scopus subject areas

  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Mapping subsurface structure through atomically thin bismuth films on Si(1 1 1)-(7 × 7) with scanning tunneling microscope. / Oh, Youngtek; Seo, Jungpil; Suh, Hwansoo; Seo, Jung Seok; Kahng, Se-Jong; Kuk, Young.

In: Surface Science, Vol. 602, No. 21, 01.11.2008, p. 3352-3357.

Research output: Contribution to journalArticle

Oh, Youngtek ; Seo, Jungpil ; Suh, Hwansoo ; Seo, Jung Seok ; Kahng, Se-Jong ; Kuk, Young. / Mapping subsurface structure through atomically thin bismuth films on Si(1 1 1)-(7 × 7) with scanning tunneling microscope. In: Surface Science. 2008 ; Vol. 602, No. 21. pp. 3352-3357.
@article{30bbfcbbf6554b46aa09930da3fdb40c,
title = "Mapping subsurface structure through atomically thin bismuth films on Si(1 1 1)-(7 × 7) with scanning tunneling microscope",
abstract = "We performed scanning tunneling microscopy/spectroscopy measurements and spatial mapping of dI/dV on a few atomic layers of bismuth (Bi) film on a Si(1 1 1)-(7 × 7) substrate. At a Bi coverage of four monolayers (ML), local thickness variation could be measured due to thickness dependence of the surface states. At the nominal coverage of 6.5 ML, the dI/dV map reveals the subsurface structures, such as substrate step edges and buried Bi islands. The subsurface structures could be observed at specific biases, by both the electronic interference in a Bi film and the variation of the Bi surface states as a function of the film thickness.",
keywords = "Bismuth film, Scanning tunneling microscopy and spectroscopy, Subsurface structure, Surface states",
author = "Youngtek Oh and Jungpil Seo and Hwansoo Suh and Seo, {Jung Seok} and Se-Jong Kahng and Young Kuk",
year = "2008",
month = "11",
day = "1",
doi = "10.1016/j.susc.2008.09.004",
language = "English",
volume = "602",
pages = "3352--3357",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "21",

}

TY - JOUR

T1 - Mapping subsurface structure through atomically thin bismuth films on Si(1 1 1)-(7 × 7) with scanning tunneling microscope

AU - Oh, Youngtek

AU - Seo, Jungpil

AU - Suh, Hwansoo

AU - Seo, Jung Seok

AU - Kahng, Se-Jong

AU - Kuk, Young

PY - 2008/11/1

Y1 - 2008/11/1

N2 - We performed scanning tunneling microscopy/spectroscopy measurements and spatial mapping of dI/dV on a few atomic layers of bismuth (Bi) film on a Si(1 1 1)-(7 × 7) substrate. At a Bi coverage of four monolayers (ML), local thickness variation could be measured due to thickness dependence of the surface states. At the nominal coverage of 6.5 ML, the dI/dV map reveals the subsurface structures, such as substrate step edges and buried Bi islands. The subsurface structures could be observed at specific biases, by both the electronic interference in a Bi film and the variation of the Bi surface states as a function of the film thickness.

AB - We performed scanning tunneling microscopy/spectroscopy measurements and spatial mapping of dI/dV on a few atomic layers of bismuth (Bi) film on a Si(1 1 1)-(7 × 7) substrate. At a Bi coverage of four monolayers (ML), local thickness variation could be measured due to thickness dependence of the surface states. At the nominal coverage of 6.5 ML, the dI/dV map reveals the subsurface structures, such as substrate step edges and buried Bi islands. The subsurface structures could be observed at specific biases, by both the electronic interference in a Bi film and the variation of the Bi surface states as a function of the film thickness.

KW - Bismuth film

KW - Scanning tunneling microscopy and spectroscopy

KW - Subsurface structure

KW - Surface states

UR - http://www.scopus.com/inward/record.url?scp=54249118103&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54249118103&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2008.09.004

DO - 10.1016/j.susc.2008.09.004

M3 - Article

VL - 602

SP - 3352

EP - 3357

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 21

ER -