Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates

Yong Chul Jung, Jeong Hun Kim, Sang Hee Suh, Byeong Kwon Ju, Jin Sang Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Metal organic chemical vapor deposition has been investigated for growth of Bi2Te3 films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi2Te3 films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of -160 μVK-1) and good surface morphology of this material is promising for Bi2Te3-based thermoelectric thin film and two-dimensional supperlattice device applications.

Original languageEnglish
Pages (from-to)441-445
Number of pages5
JournalJournal of Crystal Growth
Volume290
Issue number2
DOIs
Publication statusPublished - 2006 May 1

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Surface morphology
Substrates
Carrier concentration
Metals
Organic Chemicals
Hall mobility
Temperature
Seebeck coefficient
Organic chemicals
Seebeck effect
Coalescence
coalescing
temperature
Chemical vapor deposition
electrical properties
Thin films
gallium arsenide
thin films

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B1. Bismuth compounds
  • B2. Thermoelectric materials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates. / Jung, Yong Chul; Kim, Jeong Hun; Suh, Sang Hee; Ju, Byeong Kwon; Kim, Jin Sang.

In: Journal of Crystal Growth, Vol. 290, No. 2, 01.05.2006, p. 441-445.

Research output: Contribution to journalArticle

Jung, Yong Chul ; Kim, Jeong Hun ; Suh, Sang Hee ; Ju, Byeong Kwon ; Kim, Jin Sang. / Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates. In: Journal of Crystal Growth. 2006 ; Vol. 290, No. 2. pp. 441-445.
@article{ed4554b29177421bbcf953b69bb63e86,
title = "Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates",
abstract = "Metal organic chemical vapor deposition has been investigated for growth of Bi2Te3 films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi2Te3 films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of -160 μVK-1) and good surface morphology of this material is promising for Bi2Te3-based thermoelectric thin film and two-dimensional supperlattice device applications.",
keywords = "A3. Metalorganic chemical vapor deposition, B1. Bismuth compounds, B2. Thermoelectric materials",
author = "Jung, {Yong Chul} and Kim, {Jeong Hun} and Suh, {Sang Hee} and Ju, {Byeong Kwon} and Kim, {Jin Sang}",
year = "2006",
month = "5",
day = "1",
doi = "10.1016/j.jcrysgro.2006.01.024",
language = "English",
volume = "290",
pages = "441--445",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates

AU - Jung, Yong Chul

AU - Kim, Jeong Hun

AU - Suh, Sang Hee

AU - Ju, Byeong Kwon

AU - Kim, Jin Sang

PY - 2006/5/1

Y1 - 2006/5/1

N2 - Metal organic chemical vapor deposition has been investigated for growth of Bi2Te3 films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi2Te3 films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of -160 μVK-1) and good surface morphology of this material is promising for Bi2Te3-based thermoelectric thin film and two-dimensional supperlattice device applications.

AB - Metal organic chemical vapor deposition has been investigated for growth of Bi2Te3 films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi2Te3 films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of -160 μVK-1) and good surface morphology of this material is promising for Bi2Te3-based thermoelectric thin film and two-dimensional supperlattice device applications.

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Bismuth compounds

KW - B2. Thermoelectric materials

UR - http://www.scopus.com/inward/record.url?scp=33646477433&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646477433&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2006.01.024

DO - 10.1016/j.jcrysgro.2006.01.024

M3 - Article

AN - SCOPUS:33646477433

VL - 290

SP - 441

EP - 445

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2

ER -