Abstract
Metal organic chemical vapor deposition has been investigated for growth of Bi2Te3 films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi2Te3 films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of -160 μVK-1) and good surface morphology of this material is promising for Bi2Te3-based thermoelectric thin film and two-dimensional supperlattice device applications.
| Original language | English |
|---|---|
| Pages (from-to) | 441-445 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 290 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2006 May 1 |
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Keywords
- A3. Metalorganic chemical vapor deposition
- B1. Bismuth compounds
- B2. Thermoelectric materials
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates. / Jung, Yong Chul; Kim, Jeong Hun; Suh, Sang Hee; Ju, Byeong Kwon; Kim, Jin Sang.
In: Journal of Crystal Growth, Vol. 290, No. 2, 01.05.2006, p. 441-445.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates
AU - Jung, Yong Chul
AU - Kim, Jeong Hun
AU - Suh, Sang Hee
AU - Ju, Byeong Kwon
AU - Kim, Jin Sang
PY - 2006/5/1
Y1 - 2006/5/1
N2 - Metal organic chemical vapor deposition has been investigated for growth of Bi2Te3 films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi2Te3 films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of -160 μVK-1) and good surface morphology of this material is promising for Bi2Te3-based thermoelectric thin film and two-dimensional supperlattice device applications.
AB - Metal organic chemical vapor deposition has been investigated for growth of Bi2Te3 films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi2Te3 films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of -160 μVK-1) and good surface morphology of this material is promising for Bi2Te3-based thermoelectric thin film and two-dimensional supperlattice device applications.
KW - A3. Metalorganic chemical vapor deposition
KW - B1. Bismuth compounds
KW - B2. Thermoelectric materials
UR - http://www.scopus.com/inward/record.url?scp=33646477433&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33646477433&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2006.01.024
DO - 10.1016/j.jcrysgro.2006.01.024
M3 - Article
AN - SCOPUS:33646477433
VL - 290
SP - 441
EP - 445
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 2
ER -