Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates

Yong Chul Jung, Jeong Hun Kim, Sang Hee Suh, Byeong Kwon Ju, Jin Sang Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Metal organic chemical vapor deposition has been investigated for growth of Bi2Te3 films on (0 0 1) GaAs substrates using trimethylbismuth and diisopropyltelluride as metal organic sources. The results of surface morphology, electrical and thermoelectric properties as a function of growth parameters are given. The surface morphologies of Bi2Te3 films were strongly dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration at the temperature higher than 240 K. The high Seebeck coefficient (of -160 μVK-1) and good surface morphology of this material is promising for Bi2Te3-based thermoelectric thin film and two-dimensional supperlattice device applications.

Original languageEnglish
Pages (from-to)441-445
Number of pages5
JournalJournal of Crystal Growth
Volume290
Issue number2
DOIs
Publication statusPublished - 2006 May 1

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Keywords

  • A3. Metalorganic chemical vapor deposition
  • B1. Bismuth compounds
  • B2. Thermoelectric materials

ASJC Scopus subject areas

  • Condensed Matter Physics

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