Mathematical modeling and measurement of etching profile for junction shape control in MR read heads

Won Je Jeong, E. Y. Shong, H. J. Hahm, K. I. Min, H. S. Choi, Young K. Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A computer model was used to predict the junction profile between magnetoresistive (MR) read sensor and hard bias element which is known to have an influence on head performance. Ion beam etching (IBE) rates as a function of incident beam angle for each material were experimentally determined for this model. Key process parameters such as stencil structure (e.g. height, shape, and etch rate of the photoresist), ion beam angle, and MR element structure were varied. A series of experiments have been performed to confirm the model prediction by employing atomic force microscopy. When the sidewall of stencil was vertical, the junction angle became small resulting from the shadowing of incident ion beams. It is also found that when a thin Ta layer was inserted between the MR element and bottom gap layer, the junction angle was increased.

Original languageEnglish
Pages (from-to)2601-2603
Number of pages3
JournalIEEE Transactions on Magnetics
Volume35
Issue number5 PART 1
DOIs
Publication statusPublished - 1999
Externally publishedYes

Keywords

  • Ion beam etching
  • Junction profile
  • Mathematical modeling
  • Mr head

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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