A mathematical model was generated to predict the junction profile between MR element and hard bias element. Etching rates as a function of incident beam angle for relevant materials were experimentally determined for this model. Key process parameters such as stencil structure, ion beam angle, and MR element structure were varied. A series of experiments were made to confirm the model prediction by employing atomic force microscopy. We have found, for example, when the sidewall of a stencil was vertical, the junction angle became small resulting from the shadowing of incident ion beams. In addition, when a thin Ta layer was inserted between the MR element and bottom gap layer, the junction angle was increased.
|Journal||Digests of the Intermag Conference|
|Publication status||Published - 1999|
|Event||Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea|
Duration: 1999 May 18 → 1999 May 21
ASJC Scopus subject areas
- Electrical and Electronic Engineering