Abstract
A mathematical model was generated to predict the junction profile between MR element and hard bias element. Etching rates as a function of incident beam angle for relevant materials were experimentally determined for this model. Key process parameters such as stencil structure, ion beam angle, and MR element structure were varied. A series of experiments were made to confirm the model prediction by employing atomic force microscopy. We have found, for example, when the sidewall of a stencil was vertical, the junction angle became small resulting from the shadowing of incident ion beams. In addition, when a thin Ta layer was inserted between the MR element and bottom gap layer, the junction angle was increased.
Original language | English |
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Pages (from-to) | DB-04 |
Journal | Digests of the Intermag Conference |
Publication status | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea Duration: 1999 May 18 → 1999 May 21 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering