Maximum Power CW 2.45-W 1.55-μm InGaAsP Laterally Tapered Laser Diodes

Du Chang Heo, Il K. Han, Jung I. Lee, Jichai Jeong

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

1.55-μm InGaAsP tapered lasers were fabricated using a highly p-doped separate confinement layer and strained compensated multiple quantum wells. A maximum power of CW 2.45 W and a diffraction-limited power of CW 1 W was obtained at room temperature, A reduction of the non-radiative Auger recombination due to a uniform hole distribution in the strain compensated multiple quantum wells (MQWs) was responsible for the high maximum power of the tapered lasers. A high diffraction-limited power of over CW 1 W was achieved by using a broadened waveguide.

Original languageEnglish
Pages (from-to)352-356
Number of pages5
JournalJournal of the Korean Physical Society
Volume43
Issue number3
Publication statusPublished - 2003 Sep 1

Fingerprint

semiconductor lasers
quantum wells
hole distribution
diffraction
lasers
waveguides
room temperature

Keywords

  • Diffractioin-limited
  • Filamentation
  • InGaAsP/InP
  • Laser diodes
  • Taper laser

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Maximum Power CW 2.45-W 1.55-μm InGaAsP Laterally Tapered Laser Diodes. / Heo, Du Chang; Han, Il K.; Lee, Jung I.; Jeong, Jichai.

In: Journal of the Korean Physical Society, Vol. 43, No. 3, 01.09.2003, p. 352-356.

Research output: Contribution to journalArticle

Heo, Du Chang ; Han, Il K. ; Lee, Jung I. ; Jeong, Jichai. / Maximum Power CW 2.45-W 1.55-μm InGaAsP Laterally Tapered Laser Diodes. In: Journal of the Korean Physical Society. 2003 ; Vol. 43, No. 3. pp. 352-356.
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AU - Han, Il K.

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AU - Jeong, Jichai

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N2 - 1.55-μm InGaAsP tapered lasers were fabricated using a highly p-doped separate confinement layer and strained compensated multiple quantum wells. A maximum power of CW 2.45 W and a diffraction-limited power of CW 1 W was obtained at room temperature, A reduction of the non-radiative Auger recombination due to a uniform hole distribution in the strain compensated multiple quantum wells (MQWs) was responsible for the high maximum power of the tapered lasers. A high diffraction-limited power of over CW 1 W was achieved by using a broadened waveguide.

AB - 1.55-μm InGaAsP tapered lasers were fabricated using a highly p-doped separate confinement layer and strained compensated multiple quantum wells. A maximum power of CW 2.45 W and a diffraction-limited power of CW 1 W was obtained at room temperature, A reduction of the non-radiative Auger recombination due to a uniform hole distribution in the strain compensated multiple quantum wells (MQWs) was responsible for the high maximum power of the tapered lasers. A high diffraction-limited power of over CW 1 W was achieved by using a broadened waveguide.

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