Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors

Jae-Sung Rieh, D. Greenberg, B. Jagannathan, G. Freeman, S. Subbanna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

54 Citations (Scopus)

Abstract

Thermal resistance has been measured for high speed SiGe HBTs with various emitter widths and lengths. The smaller devices exhibited higher thermal resistance values, but eventually resulted in lower junction temperature rise for a given power density. A physical model has been developed which showed good agreement with the measurements. The model indicates that the thermal resistance depends strongly on the deep trench geometry. The thermal resistance is also anticipated to increase with the existence of adjacent devices due to a heat dissipation interference, according to the model.

Original languageEnglish
Title of host publication2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages110-113
Number of pages4
ISBN (Print)0780371291, 9780780371293
DOIs
Publication statusPublished - 2001
Externally publishedYes
Event3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 - Ann Arbor, United States
Duration: 2001 Sep 14 → …

Other

Other3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
CountryUnited States
CityAnn Arbor
Period01/9/14 → …

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Keywords

  • Electrical resistance measurement
  • Geometry
  • Germanium silicon alloys
  • Length measurement
  • Resistance heating
  • Silicon germanium
  • Solid modeling
  • Temperature
  • Thermal resistance
  • Velocity measurement

ASJC Scopus subject areas

  • Computer Science(all)

Cite this

Rieh, J-S., Greenberg, D., Jagannathan, B., Freeman, G., & Subbanna, S. (2001). Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors. In 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 (pp. 110-113). [942350] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.2001.942350