Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors

Jae-Sung Rieh, D. Greenberg, B. Jagannathan, G. Freeman, S. Subbanna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

54 Citations (Scopus)

Abstract

Thermal resistance has been measured for high speed SiGe HBTs with various emitter widths and lengths. The smaller devices exhibited higher thermal resistance values, but eventually resulted in lower junction temperature rise for a given power density. A physical model has been developed which showed good agreement with the measurements. The model indicates that the thermal resistance depends strongly on the deep trench geometry. The thermal resistance is also anticipated to increase with the existence of adjacent devices due to a heat dissipation interference, according to the model.

Original languageEnglish
Title of host publication2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages110-113
Number of pages4
ISBN (Print)0780371291, 9780780371293
DOIs
Publication statusPublished - 2001
Externally publishedYes
Event3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 - Ann Arbor, United States
Duration: 2001 Sep 14 → …

Other

Other3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
CountryUnited States
CityAnn Arbor
Period01/9/14 → …

Fingerprint

Heterojunction bipolar transistors
Heat resistance
Heat losses
Geometry
Temperature

Keywords

  • Electrical resistance measurement
  • Geometry
  • Germanium silicon alloys
  • Length measurement
  • Resistance heating
  • Silicon germanium
  • Solid modeling
  • Temperature
  • Thermal resistance
  • Velocity measurement

ASJC Scopus subject areas

  • Computer Science(all)

Cite this

Rieh, J-S., Greenberg, D., Jagannathan, B., Freeman, G., & Subbanna, S. (2001). Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors. In 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 (pp. 110-113). [942350] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.2001.942350

Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors. / Rieh, Jae-Sung; Greenberg, D.; Jagannathan, B.; Freeman, G.; Subbanna, S.

2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 110-113 942350.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rieh, J-S, Greenberg, D, Jagannathan, B, Freeman, G & Subbanna, S 2001, Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors. in 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001., 942350, Institute of Electrical and Electronics Engineers Inc., pp. 110-113, 3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001, Ann Arbor, United States, 01/9/14. https://doi.org/10.1109/SMIC.2001.942350
Rieh J-S, Greenberg D, Jagannathan B, Freeman G, Subbanna S. Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors. In 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 110-113. 942350 https://doi.org/10.1109/SMIC.2001.942350
Rieh, Jae-Sung ; Greenberg, D. ; Jagannathan, B. ; Freeman, G. ; Subbanna, S. / Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors. 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 110-113
@inproceedings{e52f76fd3e724879a8e60e2c2b5625ec,
title = "Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors",
abstract = "Thermal resistance has been measured for high speed SiGe HBTs with various emitter widths and lengths. The smaller devices exhibited higher thermal resistance values, but eventually resulted in lower junction temperature rise for a given power density. A physical model has been developed which showed good agreement with the measurements. The model indicates that the thermal resistance depends strongly on the deep trench geometry. The thermal resistance is also anticipated to increase with the existence of adjacent devices due to a heat dissipation interference, according to the model.",
keywords = "Electrical resistance measurement, Geometry, Germanium silicon alloys, Length measurement, Resistance heating, Silicon germanium, Solid modeling, Temperature, Thermal resistance, Velocity measurement",
author = "Jae-Sung Rieh and D. Greenberg and B. Jagannathan and G. Freeman and S. Subbanna",
year = "2001",
doi = "10.1109/SMIC.2001.942350",
language = "English",
isbn = "0780371291",
pages = "110--113",
booktitle = "2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors

AU - Rieh, Jae-Sung

AU - Greenberg, D.

AU - Jagannathan, B.

AU - Freeman, G.

AU - Subbanna, S.

PY - 2001

Y1 - 2001

N2 - Thermal resistance has been measured for high speed SiGe HBTs with various emitter widths and lengths. The smaller devices exhibited higher thermal resistance values, but eventually resulted in lower junction temperature rise for a given power density. A physical model has been developed which showed good agreement with the measurements. The model indicates that the thermal resistance depends strongly on the deep trench geometry. The thermal resistance is also anticipated to increase with the existence of adjacent devices due to a heat dissipation interference, according to the model.

AB - Thermal resistance has been measured for high speed SiGe HBTs with various emitter widths and lengths. The smaller devices exhibited higher thermal resistance values, but eventually resulted in lower junction temperature rise for a given power density. A physical model has been developed which showed good agreement with the measurements. The model indicates that the thermal resistance depends strongly on the deep trench geometry. The thermal resistance is also anticipated to increase with the existence of adjacent devices due to a heat dissipation interference, according to the model.

KW - Electrical resistance measurement

KW - Geometry

KW - Germanium silicon alloys

KW - Length measurement

KW - Resistance heating

KW - Silicon germanium

KW - Solid modeling

KW - Temperature

KW - Thermal resistance

KW - Velocity measurement

UR - http://www.scopus.com/inward/record.url?scp=84951942739&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84951942739&partnerID=8YFLogxK

U2 - 10.1109/SMIC.2001.942350

DO - 10.1109/SMIC.2001.942350

M3 - Conference contribution

SN - 0780371291

SN - 9780780371293

SP - 110

EP - 113

BT - 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001

PB - Institute of Electrical and Electronics Engineers Inc.

ER -