Measurement of external stress on bulk GaN

Ji Hyun Kim, K. Baik, C. Park, S. Cho, S. J. Pearton, F. Ren

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report on the measurement of stress in bulk, free-standing GaN templates under external bending using micro-Raman scattering. A 488 nm Ar-ion laser beam was scanned in a cross-sectional geometry across the GaN template held under external stress conditions. Our experiment showed that the top half of the bulk GaN was under ∼73 MPa of tensile stress while the bottom half of the GaN template was under 40 MPa of compressive stress when bent by a press screw. This data is very helpful to understand both the optical and mechanical properties of bulk GaN and for calibrating and optimizing GaN-based pressure sensors.

Original languageEnglish
Pages (from-to)2393-2396
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume203
Issue number10
DOIs
Publication statusPublished - 2006 Aug 1

Fingerprint

templates
Pressure sensors
Compressive stress
Tensile stress
Laser beams
Raman scattering
Optical properties
screws
Ions
pressure sensors
calibrating
tensile stress
Mechanical properties
Geometry
ion beams
laser beams
mechanical properties
Raman spectra
optical properties
Experiments

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Measurement of external stress on bulk GaN. / Kim, Ji Hyun; Baik, K.; Park, C.; Cho, S.; Pearton, S. J.; Ren, F.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 203, No. 10, 01.08.2006, p. 2393-2396.

Research output: Contribution to journalArticle

Kim, Ji Hyun ; Baik, K. ; Park, C. ; Cho, S. ; Pearton, S. J. ; Ren, F. / Measurement of external stress on bulk GaN. In: Physica Status Solidi (A) Applications and Materials Science. 2006 ; Vol. 203, No. 10. pp. 2393-2396.
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