Measurement of external stress on bulk GaN

J. Kim, K. Baik, C. Park, S. Cho, S. J. Pearton, F. Ren

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report on the measurement of stress in bulk, free-standing GaN templates under external bending using micro-Raman scattering. A 488 nm Ar-ion laser beam was scanned in a cross-sectional geometry across the GaN template held under external stress conditions. Our experiment showed that the top half of the bulk GaN was under ∼73 MPa of tensile stress while the bottom half of the GaN template was under 40 MPa of compressive stress when bent by a press screw. This data is very helpful to understand both the optical and mechanical properties of bulk GaN and for calibrating and optimizing GaN-based pressure sensors.

Original languageEnglish
Pages (from-to)2393-2396
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume203
Issue number10
DOIs
Publication statusPublished - 2006 Aug

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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