Measurement of ionizing radiation using carbon nanotube field effect transistor

Xiao Wu Tang, Yong Yang, Woong Kim, Qian Wang, Pengfei Qi, Hongjie Dai, Lei Xing

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Single-walled carbon nanotubes (SWNTs) are a new class of highly promising nanomaterials for future nano-electronics. Here, we present an initial investigation of the feasibility of using SWNT field effect transistors (SWNT-FETs) formed on silicon-oxide substrates and suspended FETs for radiation dosimetry applications. Electrical measurements and atomic force microscopy (AFM) revealed the intactness of SWNT-FET devices after exposure to over 1 Gy of 6 MV therapeutic x-rays. The sensitivity of SWNT-FET devices to x-ray irradiation is elucidated by real-time dose monitoring experiments and accumulated dose reading based on threshold voltage shift. SWNT-FET devices exhibit sensitivities to x-rays that are at least comparable to or orders of magnitude higher than commercial MOSFET (metal-oxide semiconductor field effect transistor) dosimeters and could find applications as miniature dosimeters for microbeam profiling and implantation.

Original languageEnglish
Pages (from-to)N23-N31
JournalPhysics in Medicine and Biology
Volume50
Issue number3
DOIs
Publication statusPublished - 2005 Feb 7

ASJC Scopus subject areas

  • Radiological and Ultrasound Technology
  • Radiology Nuclear Medicine and imaging

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