Measurement of ionizing radiation using carbon nanotube field effect transistor

Xiao Wu Tang, Yong Yang, Woong Kim, Qian Wang, Pengfei Qi, Hongjie Dai, Lei Xing

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Single-walled carbon nanotubes (SWNTs) are a new class of highly promising nanomaterials for future nano-electronics. Here, we present an initial investigation of the feasibility of using SWNT field effect transistors (SWNT-FETs) formed on silicon-oxide substrates and suspended FETs for radiation dosimetry applications. Electrical measurements and atomic force microscopy (AFM) revealed the intactness of SWNT-FET devices after exposure to over 1 Gy of 6 MV therapeutic x-rays. The sensitivity of SWNT-FET devices to x-ray irradiation is elucidated by real-time dose monitoring experiments and accumulated dose reading based on threshold voltage shift. SWNT-FET devices exhibit sensitivities to x-rays that are at least comparable to or orders of magnitude higher than commercial MOSFET (metal-oxide semiconductor field effect transistor) dosimeters and could find applications as miniature dosimeters for microbeam profiling and implantation.

Original languageEnglish
JournalPhysics in Medicine and Biology
Volume50
Issue number3
DOIs
Publication statusPublished - 2005 Feb 7
Externally publishedYes

Fingerprint

Carbon nanotube field effect transistors
Carbon Nanotubes
Ionizing radiation
Single-walled carbon nanotubes (SWCN)
Ionizing Radiation
ionizing radiation
Field effect transistors
field effect transistors
carbon nanotubes
Dosimeters
dosimeters
X-Rays
X rays
Equipment and Supplies
Oxides
Dosimetry
Radiometry
Semiconductors
Nanoelectronics
Nanostructures

ASJC Scopus subject areas

  • Biomedical Engineering
  • Physics and Astronomy (miscellaneous)
  • Radiology Nuclear Medicine and imaging
  • Radiological and Ultrasound Technology

Cite this

Measurement of ionizing radiation using carbon nanotube field effect transistor. / Tang, Xiao Wu; Yang, Yong; Kim, Woong; Wang, Qian; Qi, Pengfei; Dai, Hongjie; Xing, Lei.

In: Physics in Medicine and Biology, Vol. 50, No. 3, 07.02.2005.

Research output: Contribution to journalArticle

Tang, Xiao Wu ; Yang, Yong ; Kim, Woong ; Wang, Qian ; Qi, Pengfei ; Dai, Hongjie ; Xing, Lei. / Measurement of ionizing radiation using carbon nanotube field effect transistor. In: Physics in Medicine and Biology. 2005 ; Vol. 50, No. 3.
@article{63bdc6c3f4cc4f1fbef73d3ed485e342,
title = "Measurement of ionizing radiation using carbon nanotube field effect transistor",
abstract = "Single-walled carbon nanotubes (SWNTs) are a new class of highly promising nanomaterials for future nano-electronics. Here, we present an initial investigation of the feasibility of using SWNT field effect transistors (SWNT-FETs) formed on silicon-oxide substrates and suspended FETs for radiation dosimetry applications. Electrical measurements and atomic force microscopy (AFM) revealed the intactness of SWNT-FET devices after exposure to over 1 Gy of 6 MV therapeutic x-rays. The sensitivity of SWNT-FET devices to x-ray irradiation is elucidated by real-time dose monitoring experiments and accumulated dose reading based on threshold voltage shift. SWNT-FET devices exhibit sensitivities to x-rays that are at least comparable to or orders of magnitude higher than commercial MOSFET (metal-oxide semiconductor field effect transistor) dosimeters and could find applications as miniature dosimeters for microbeam profiling and implantation.",
author = "Tang, {Xiao Wu} and Yong Yang and Woong Kim and Qian Wang and Pengfei Qi and Hongjie Dai and Lei Xing",
year = "2005",
month = "2",
day = "7",
doi = "10.1088/0031-9155/50/3/N02",
language = "English",
volume = "50",
journal = "Physics in Medicine and Biology",
issn = "0031-9155",
publisher = "IOP Publishing Ltd.",
number = "3",

}

TY - JOUR

T1 - Measurement of ionizing radiation using carbon nanotube field effect transistor

AU - Tang, Xiao Wu

AU - Yang, Yong

AU - Kim, Woong

AU - Wang, Qian

AU - Qi, Pengfei

AU - Dai, Hongjie

AU - Xing, Lei

PY - 2005/2/7

Y1 - 2005/2/7

N2 - Single-walled carbon nanotubes (SWNTs) are a new class of highly promising nanomaterials for future nano-electronics. Here, we present an initial investigation of the feasibility of using SWNT field effect transistors (SWNT-FETs) formed on silicon-oxide substrates and suspended FETs for radiation dosimetry applications. Electrical measurements and atomic force microscopy (AFM) revealed the intactness of SWNT-FET devices after exposure to over 1 Gy of 6 MV therapeutic x-rays. The sensitivity of SWNT-FET devices to x-ray irradiation is elucidated by real-time dose monitoring experiments and accumulated dose reading based on threshold voltage shift. SWNT-FET devices exhibit sensitivities to x-rays that are at least comparable to or orders of magnitude higher than commercial MOSFET (metal-oxide semiconductor field effect transistor) dosimeters and could find applications as miniature dosimeters for microbeam profiling and implantation.

AB - Single-walled carbon nanotubes (SWNTs) are a new class of highly promising nanomaterials for future nano-electronics. Here, we present an initial investigation of the feasibility of using SWNT field effect transistors (SWNT-FETs) formed on silicon-oxide substrates and suspended FETs for radiation dosimetry applications. Electrical measurements and atomic force microscopy (AFM) revealed the intactness of SWNT-FET devices after exposure to over 1 Gy of 6 MV therapeutic x-rays. The sensitivity of SWNT-FET devices to x-ray irradiation is elucidated by real-time dose monitoring experiments and accumulated dose reading based on threshold voltage shift. SWNT-FET devices exhibit sensitivities to x-rays that are at least comparable to or orders of magnitude higher than commercial MOSFET (metal-oxide semiconductor field effect transistor) dosimeters and could find applications as miniature dosimeters for microbeam profiling and implantation.

UR - http://www.scopus.com/inward/record.url?scp=14544269887&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=14544269887&partnerID=8YFLogxK

U2 - 10.1088/0031-9155/50/3/N02

DO - 10.1088/0031-9155/50/3/N02

M3 - Article

VL - 50

JO - Physics in Medicine and Biology

JF - Physics in Medicine and Biology

SN - 0031-9155

IS - 3

ER -