Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors

Jae-Sung Rieh, P. K. Bhattacharya, E. T. Croke

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The SiGe/Si npn heterostructure bipolar transistor (HBT) is a minority carrier device and its performance is governed by the transport properties of minority carriers. The temperature dependence of the minority electron mobility in the HBT was measured by the magnetoresistance technique. Measurement was made from T = 300 K down to 5 K in an Oxford superconducting cryo-magnet system, and the measured minority electron mobilities exhibited strong temperature dependence. This behavior was compared with that of majority carrier mobilities, which show weak temperature dependence at doping concentrations of the order of 1019 cm-3. The mobility value at 300 K obtained by the magnetoresistance technique agrees well with the value derived from the fT method.

Original languageEnglish
Title of host publicationAnnual Device Research Conference Digest
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages184-185
Number of pages2
Publication statusPublished - 1999 Dec 1
Externally publishedYes
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: 1999 Jun 281999 Jun 30

Other

OtherProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period99/6/2899/6/30

Fingerprint

Electron mobility
Heterojunction bipolar transistors
Bipolar transistors
Magnetoresistance
Heterojunctions
Carrier mobility
Transport properties
Temperature
Magnets
Doping (additives)

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Rieh, J-S., Bhattacharya, P. K., & Croke, E. T. (1999). Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors. In Annual Device Research Conference Digest (pp. 184-185). Piscataway, NJ, United States: IEEE.

Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors. / Rieh, Jae-Sung; Bhattacharya, P. K.; Croke, E. T.

Annual Device Research Conference Digest. Piscataway, NJ, United States : IEEE, 1999. p. 184-185.

Research output: Chapter in Book/Report/Conference proceedingChapter

Rieh, J-S, Bhattacharya, PK & Croke, ET 1999, Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors. in Annual Device Research Conference Digest. IEEE, Piscataway, NJ, United States, pp. 184-185, Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, 99/6/28.
Rieh J-S, Bhattacharya PK, Croke ET. Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors. In Annual Device Research Conference Digest. Piscataway, NJ, United States: IEEE. 1999. p. 184-185
Rieh, Jae-Sung ; Bhattacharya, P. K. ; Croke, E. T. / Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors. Annual Device Research Conference Digest. Piscataway, NJ, United States : IEEE, 1999. pp. 184-185
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