Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors

J. S. Rieh, P. K. Bhattacharya, E. T. Croke

Research output: Contribution to conferencePaper

Abstract

The SiGe/Si npn heterostructure bipolar transistor (HBT) is a minority carrier device and its performance is governed by the transport properties of minority carriers. The temperature dependence of the minority electron mobility in the HBT was measured by the magnetoresistance technique. Measurement was made from T = 300 K down to 5 K in an Oxford superconducting cryo-magnet system, and the measured minority electron mobilities exhibited strong temperature dependence. This behavior was compared with that of majority carrier mobilities, which show weak temperature dependence at doping concentrations of the order of 1019 cm-3. The mobility value at 300 K obtained by the magnetoresistance technique agrees well with the value derived from the fT method.

Original languageEnglish
Pages184-185
Number of pages2
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: 1999 Jun 281999 Jun 30

Other

OtherProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period99/6/2899/6/30

ASJC Scopus subject areas

  • Engineering(all)

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    Rieh, J. S., Bhattacharya, P. K., & Croke, E. T. (1999). Measurement of minority electron mobilities in SiGe base region of npn SiGe/Si heterojunction bipolar transistors. 184-185. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .