Measurement of thermal contact resistance between CVD-grown graphene and SiO2 by null point scanning thermal microscopy

Jaehun Chung, Gwangseok Hwang, Hyeongkeun Kim, Wooseok Yang, Young Ki Choi, Oh Myoung Kwon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

For graphene-based electronic devices, it is crucial to measure and analyze the thermal contact resistance between the graphene and the insulating layer. Herein, we measure the thermal contact resistance between CVD-grown graphene and a SiO2 layer using null point scanning thermal microscopy (NP SThM), which can profile the temperature distribution quantitatively with nanoscale spatial resolution by preventing the influence of both the heat flux through the air gap and the variation of sample surface properties such as hydrophilicity. Through the comparison of the temperature jump across the interface of the electrically heated graphene and SiO2 layer with the temperature profile without the thermal contact resistance modelled with finite element method, the thermal contact resistance between the graphene and SiO2 is obtained as 10 × 108 45 × 108 m 2K/W.

Original languageEnglish
Title of host publicationProceedings of the IEEE Conference on Nanotechnology
DOIs
Publication statusPublished - 2012 Nov 22
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: 2012 Aug 202012 Aug 23

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
CountryUnited Kingdom
CityBirmingham
Period12/8/2012/8/23

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ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Chung, J., Hwang, G., Kim, H., Yang, W., Choi, Y. K., & Kwon, O. M. (2012). Measurement of thermal contact resistance between CVD-grown graphene and SiO2 by null point scanning thermal microscopy. In Proceedings of the IEEE Conference on Nanotechnology [6322115] https://doi.org/10.1109/NANO.2012.6322115