Measurement of thermal contact resistance between CVD-grown graphene and SiO2 by null point scanning thermal microscopy

Jaehun Chung; Gwangseok Hwang; Hyeongkeun Kim; Wooseok Yang; Young Ki Choi; Ohmyoung Kwon

doi:10.1109/NANO.2012.6322115

Measurement of thermal contact resistance between CVD-grown graphene and SiO₂ by null point scanning thermal microscopy

Jaehun Chung, Gwangseok Hwang, Hyeongkeun Kim, Wooseok Yang, Young Ki Choi, Ohmyoung Kwon

School of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

For graphene-based electronic devices, it is crucial to measure and analyze the thermal contact resistance between the graphene and the insulating layer. Herein, we measure the thermal contact resistance between CVD-grown graphene and a SiO₂ layer using null point scanning thermal microscopy (NP SThM), which can profile the temperature distribution quantitatively with nanoscale spatial resolution by preventing the influence of both the heat flux through the air gap and the variation of sample surface properties such as hydrophilicity. Through the comparison of the temperature jump across the interface of the electrically heated graphene and SiO₂ layer with the temperature profile without the thermal contact resistance modelled with finite element method, the thermal contact resistance between the graphene and SiO₂ is obtained as 10 × 10⁸ 45 × 10⁸ m ²K/W.

Original language	English
Title of host publication	2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs	https://doi.org/10.1109/NANO.2012.6322115
Publication status	Published - 2012
Event	2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom Duration: 2012 Aug 20 → 2012 Aug 23

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Other

Other	2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Country/Territory	United Kingdom
City	Birmingham
Period	12/8/20 → 12/8/23

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

Access to Document

10.1109/NANO.2012.6322115

Cite this

Chung, J., Hwang, G., Kim, H., Yang, W., Choi, Y. K., & Kwon, O. (2012). Measurement of thermal contact resistance between CVD-grown graphene and SiO₂ by null point scanning thermal microscopy. In 2012 12th IEEE International Conference on Nanotechnology, NANO 2012 [6322115] (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2012.6322115

Measurement of thermal contact resistance between CVD-grown graphene and SiO₂ by null point scanning thermal microscopy. / Chung, Jaehun; Hwang, Gwangseok; Kim, Hyeongkeun; Yang, Wooseok; Choi, Young Ki; Kwon, Ohmyoung.

2012 12th IEEE International Conference on Nanotechnology, NANO 2012. 2012. 6322115 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chung, J, Hwang, G, Kim, H, Yang, W, Choi, YK & Kwon, O 2012, Measurement of thermal contact resistance between CVD-grown graphene and SiO₂ by null point scanning thermal microscopy. in 2012 12th IEEE International Conference on Nanotechnology, NANO 2012., 6322115, Proceedings of the IEEE Conference on Nanotechnology, 2012 12th IEEE International Conference on Nanotechnology, NANO 2012, Birmingham, United Kingdom, 12/8/20. https://doi.org/10.1109/NANO.2012.6322115

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abstract = "For graphene-based electronic devices, it is crucial to measure and analyze the thermal contact resistance between the graphene and the insulating layer. Herein, we measure the thermal contact resistance between CVD-grown graphene and a SiO2 layer using null point scanning thermal microscopy (NP SThM), which can profile the temperature distribution quantitatively with nanoscale spatial resolution by preventing the influence of both the heat flux through the air gap and the variation of sample surface properties such as hydrophilicity. Through the comparison of the temperature jump across the interface of the electrically heated graphene and SiO2 layer with the temperature profile without the thermal contact resistance modelled with finite element method, the thermal contact resistance between the graphene and SiO2 is obtained as 10 × 108 45 × 108 m 2K/W.",

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