TY - GEN
T1 - Measurement of thermal contact resistance between CVD-grown graphene and SiO2 by null point scanning thermal microscopy
AU - Chung, Jaehun
AU - Hwang, Gwangseok
AU - Kim, Hyeongkeun
AU - Yang, Wooseok
AU - Choi, Young Ki
AU - Kwon, Ohmyoung
PY - 2012
Y1 - 2012
N2 - For graphene-based electronic devices, it is crucial to measure and analyze the thermal contact resistance between the graphene and the insulating layer. Herein, we measure the thermal contact resistance between CVD-grown graphene and a SiO2 layer using null point scanning thermal microscopy (NP SThM), which can profile the temperature distribution quantitatively with nanoscale spatial resolution by preventing the influence of both the heat flux through the air gap and the variation of sample surface properties such as hydrophilicity. Through the comparison of the temperature jump across the interface of the electrically heated graphene and SiO2 layer with the temperature profile without the thermal contact resistance modelled with finite element method, the thermal contact resistance between the graphene and SiO2 is obtained as 10 × 108 45 × 108 m 2K/W.
AB - For graphene-based electronic devices, it is crucial to measure and analyze the thermal contact resistance between the graphene and the insulating layer. Herein, we measure the thermal contact resistance between CVD-grown graphene and a SiO2 layer using null point scanning thermal microscopy (NP SThM), which can profile the temperature distribution quantitatively with nanoscale spatial resolution by preventing the influence of both the heat flux through the air gap and the variation of sample surface properties such as hydrophilicity. Through the comparison of the temperature jump across the interface of the electrically heated graphene and SiO2 layer with the temperature profile without the thermal contact resistance modelled with finite element method, the thermal contact resistance between the graphene and SiO2 is obtained as 10 × 108 45 × 108 m 2K/W.
UR - http://www.scopus.com/inward/record.url?scp=84869192749&partnerID=8YFLogxK
U2 - 10.1109/NANO.2012.6322115
DO - 10.1109/NANO.2012.6322115
M3 - Conference contribution
AN - SCOPUS:84869192749
SN - 9781467321983
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
T2 - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Y2 - 20 August 2012 through 23 August 2012
ER -