Measurements of current spreading length and design of GaN-based light emitting diodes

Hyunsoo Kim, Jaehee Cho, Jeong Wook Lee, Sukho Yoon, Hyungkun Kim, Cheolsoo Sone, Yongjo Park, Tae Yeon Seong

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p -type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10% as compared to LEDs made with standard reflectors.

Original languageEnglish
Article number063510
JournalApplied Physics Letters
Volume90
Issue number6
DOIs
Publication statusPublished - 2007 Feb 19

Fingerprint

light emitting diodes
reflectors
current distribution
current density
augmentation
output
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Measurements of current spreading length and design of GaN-based light emitting diodes. / Kim, Hyunsoo; Cho, Jaehee; Lee, Jeong Wook; Yoon, Sukho; Kim, Hyungkun; Sone, Cheolsoo; Park, Yongjo; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 90, No. 6, 063510, 19.02.2007.

Research output: Contribution to journalArticle

Kim, Hyunsoo ; Cho, Jaehee ; Lee, Jeong Wook ; Yoon, Sukho ; Kim, Hyungkun ; Sone, Cheolsoo ; Park, Yongjo ; Seong, Tae Yeon. / Measurements of current spreading length and design of GaN-based light emitting diodes. In: Applied Physics Letters. 2007 ; Vol. 90, No. 6.
@article{f936712816e04aac85895e6fbf73d824,
title = "Measurements of current spreading length and design of GaN-based light emitting diodes",
abstract = "The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p -type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10{\%} as compared to LEDs made with standard reflectors.",
author = "Hyunsoo Kim and Jaehee Cho and Lee, {Jeong Wook} and Sukho Yoon and Hyungkun Kim and Cheolsoo Sone and Yongjo Park and Seong, {Tae Yeon}",
year = "2007",
month = "2",
day = "19",
doi = "10.1063/1.2450670",
language = "English",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Measurements of current spreading length and design of GaN-based light emitting diodes

AU - Kim, Hyunsoo

AU - Cho, Jaehee

AU - Lee, Jeong Wook

AU - Yoon, Sukho

AU - Kim, Hyungkun

AU - Sone, Cheolsoo

AU - Park, Yongjo

AU - Seong, Tae Yeon

PY - 2007/2/19

Y1 - 2007/2/19

N2 - The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p -type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10% as compared to LEDs made with standard reflectors.

AB - The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p -type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10% as compared to LEDs made with standard reflectors.

UR - http://www.scopus.com/inward/record.url?scp=33846982209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846982209&partnerID=8YFLogxK

U2 - 10.1063/1.2450670

DO - 10.1063/1.2450670

M3 - Article

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 063510

ER -