Mechanical strain-induced defect states in amorphous silicon channel layers of thin-film transistors

Minsuk Kim, Hyungon Oh, Sukhyung Park, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we examined mechanical strain-induced defect states in hydrogenated amorphous silicon (a-Si:H) channel layers of thin-film transistors (TFTs) bent with a curvature radius of 18mm. When strain is applied to the TFTs, our devices feature strain-induced variations in threshold voltage (~1.47V), subthreshold swing (~0.36V/dec), and field-effect mobility (~0.031cm2 V-1 s-1). The electrical characteristics of a-Si:H TFTs on bendable substrates under mechanical strain are explained by the variation in the density of states (DOS) of defects in the channel layers. Our simulation work on the DOS in the a-Si:H channel layers under mechanical strain reveals that the mechanical strain causes not only the deformation of the density of mid-gap defect states but also an increase in the band-tail states within the band gap.

Original languageEnglish
JournalThin Solid Films
DOIs
Publication statusAccepted/In press - 2016 Aug 30

Fingerprint

Thin film transistors
Amorphous silicon
amorphous silicon
transistors
Defects
defects
thin films
threshold voltage
curvature
radii
causes
Threshold voltage
Energy gap
simulation
Substrates

Keywords

  • Bendability
  • Density of states
  • Flexible
  • Mechanical strain
  • Thin-film transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Mechanical strain-induced defect states in amorphous silicon channel layers of thin-film transistors. / Kim, Minsuk; Oh, Hyungon; Park, Sukhyung; Cho, Kyoungah; Kim, Sangsig.

In: Thin Solid Films, 30.08.2016.

Research output: Contribution to journalArticle

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