Mechanism for CuPt-type ordering in mixed III-V epitaxial layers

B. A. Philips, A. G. Norman, Tae Yeon Seong, S. Mahajan, G. R. Booker, M. Skowronski, J. P. Harbison, V. G. Keramidas

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Abstract

A model is proposed to rationalize the occurence of CuPt-type ordering in mixed III-V epitaxial layers grown on (001) substrates. It is invoked that 2× surface reconstruction occuring on group V terminated (001) surfaces produces dilated and compressed regions in sub-surface layers. The presence of these regions biases the occupation of certain sites during the growth of a layer consisting of atoms differing in their tetrahedral radii. By assuming that the reconstruction always occurs at the growing surface, it is possible to explain the evolution of CuPt-type ordering in epitaxial layers. Also, based on the model, experimental observations pertaining to the influence of growth conditions, surface misorientation and steps on ordering can be rationalized.

Original languageEnglish
Pages (from-to)249-263
Number of pages15
JournalJournal of Crystal Growth
Volume140
Issue number3-4
Publication statusPublished - 1994 Jul 1
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Philips, B. A., Norman, A. G., Seong, T. Y., Mahajan, S., Booker, G. R., Skowronski, M., Harbison, J. P., & Keramidas, V. G. (1994). Mechanism for CuPt-type ordering in mixed III-V epitaxial layers. Journal of Crystal Growth, 140(3-4), 249-263.