Mechanism of nonalloyed Al ohmic contacts to n-type ZnO: Al epitaxial layer

Han Ki Kim, Tae Yeon Seong, Koung Kook Kim, Seoug Ju Park, Young Soo Yoon, Ilesanmi Adesida

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50 Citations (Scopus)

Abstract

The mechanism of Al ohmic contacts to n-type zinc oxide (ZnO:Al) epitaxial layer was investigated. The formation of an Al-ZnO interfacial phase at room temperature was responsible for the low specific resistivity (8 ± 0.3 × 10-4 Ωcm2). The results of Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) depth profiles, and glancing angle X-ray diffraction (GXRD) indicate that an interfacial reaction between Al and ZnO results in an increased doping concentration in the region of the ZnO surface resulting in a low specific contact resistivity without the need for a thermal annealing process.

Original languageEnglish
Pages (from-to)976-979
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number3
Publication statusPublished - 2004 Mar 1
Externally publishedYes

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Keywords

  • Auger electron spectroscopy
  • Interfacial reaction
  • Ohmic contact
  • Specific contact resistivity
  • X-ray photoelectron spectroscopy
  • ZnO

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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