Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN

ja Soon Jang, Tae Yeon Seong

Research output: Contribution to journalLetter

65 Citations (Scopus)

Abstract

X-ray photoelectron spectroscopy (XPS) was employed to investigate the chemical bonding and electronic properties of the interfaces between Pt and [formula omitted] layers that were two-step surface treated using a buffered-oxide etch solution, and hence, to understand the surface-treatment time dependence of the Schottky barrier height (SBH). Current–voltage [formula omitted] measurements show that the effective SBH decreases with increasing surface-treatment time. The XPS results show that as the treatment time increases, the Ga [formula omitted] and Pt [formula omitted] core levels for the 20-min-treated samples shift toward the lower-binding-energy side by 0.6 and 1.5 eV, respectively, compared to the 0.5-min-treated one. It is further shown that the intensity of the oxygen core-level peak decreases with increasing treatment time. Based on the [formula omitted] and XPS results, the observed reduction of the effective SBHs is attributed to the combined effects of the effective removal of the native oxide and the shift of the surface Fermi level toward the valence-band edge.

Original languageEnglish
Pages (from-to)3064-3066
Number of pages3
JournalJournal of Applied Physics
Volume88
Issue number5
DOIs
Publication statusPublished - 2000 Sep 1
Externally publishedYes

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photoelectron spectroscopy
surface treatment
x rays
oxides
shift
Fermi surfaces
time dependence
binding energy
valence
oxygen
electronics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN. / Jang, ja Soon; Seong, Tae Yeon.

In: Journal of Applied Physics, Vol. 88, No. 5, 01.09.2000, p. 3064-3066.

Research output: Contribution to journalLetter

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title = "Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN",
abstract = "X-ray photoelectron spectroscopy (XPS) was employed to investigate the chemical bonding and electronic properties of the interfaces between Pt and [formula omitted] layers that were two-step surface treated using a buffered-oxide etch solution, and hence, to understand the surface-treatment time dependence of the Schottky barrier height (SBH). Current–voltage [formula omitted] measurements show that the effective SBH decreases with increasing surface-treatment time. The XPS results show that as the treatment time increases, the Ga [formula omitted] and Pt [formula omitted] core levels for the 20-min-treated samples shift toward the lower-binding-energy side by 0.6 and 1.5 eV, respectively, compared to the 0.5-min-treated one. It is further shown that the intensity of the oxygen core-level peak decreases with increasing treatment time. Based on the [formula omitted] and XPS results, the observed reduction of the effective SBHs is attributed to the combined effects of the effective removal of the native oxide and the shift of the surface Fermi level toward the valence-band edge.",
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T1 - Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN

AU - Jang, ja Soon

AU - Seong, Tae Yeon

PY - 2000/9/1

Y1 - 2000/9/1

N2 - X-ray photoelectron spectroscopy (XPS) was employed to investigate the chemical bonding and electronic properties of the interfaces between Pt and [formula omitted] layers that were two-step surface treated using a buffered-oxide etch solution, and hence, to understand the surface-treatment time dependence of the Schottky barrier height (SBH). Current–voltage [formula omitted] measurements show that the effective SBH decreases with increasing surface-treatment time. The XPS results show that as the treatment time increases, the Ga [formula omitted] and Pt [formula omitted] core levels for the 20-min-treated samples shift toward the lower-binding-energy side by 0.6 and 1.5 eV, respectively, compared to the 0.5-min-treated one. It is further shown that the intensity of the oxygen core-level peak decreases with increasing treatment time. Based on the [formula omitted] and XPS results, the observed reduction of the effective SBHs is attributed to the combined effects of the effective removal of the native oxide and the shift of the surface Fermi level toward the valence-band edge.

AB - X-ray photoelectron spectroscopy (XPS) was employed to investigate the chemical bonding and electronic properties of the interfaces between Pt and [formula omitted] layers that were two-step surface treated using a buffered-oxide etch solution, and hence, to understand the surface-treatment time dependence of the Schottky barrier height (SBH). Current–voltage [formula omitted] measurements show that the effective SBH decreases with increasing surface-treatment time. The XPS results show that as the treatment time increases, the Ga [formula omitted] and Pt [formula omitted] core levels for the 20-min-treated samples shift toward the lower-binding-energy side by 0.6 and 1.5 eV, respectively, compared to the 0.5-min-treated one. It is further shown that the intensity of the oxygen core-level peak decreases with increasing treatment time. Based on the [formula omitted] and XPS results, the observed reduction of the effective SBHs is attributed to the combined effects of the effective removal of the native oxide and the shift of the surface Fermi level toward the valence-band edge.

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