MEM relay for reconfigurable RF circuits

R. E. Mihailovich; M. Kim; J. B. Hacker; E. A. Sovero; J. Studer; J. A. Higgins; J. F. DeNatale

doi:10.1109/7260.914300

MEM relay for reconfigurable RF circuits

R. E. Mihailovich, M. Kim, J. B. Hacker, E. A. Sovero, J. Studer, J. A. Higgins, J. F. DeNatale

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

164 Citations (Scopus)

Abstract

We describe a microelectromechanical (MEM) relay technology for high-performance reconfigurable RF circuits. This microrelay, fabricated using surface micromachining, is a metal contact relay with electrical isolation between signal and drive lines. This relay provides excellent switching performance over a broad frequency band (insertion loss of 0.1 dB and isolation of 30 dB at 40 GHz), versatility in switch circuit configurations (microstrip and coplanar, shunt and series), and the capability for monolithic integration with high-frequency electronics. In addition, this MEM relay technology has demonstrated yields and lifetimes that are promising for RF circuit implementation.

Original language	English
Pages (from-to)	53-55
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	11
Issue number	2
DOIs	https://doi.org/10.1109/7260.914300
Publication status	Published - 2001 Feb

Keywords

Broadband
MEM
Reconfigurable
Relay
Reliability

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/7260.914300

Cite this

@article{1a24027b8a8f43db9ad56cde3665dd06,

title = "MEM relay for reconfigurable RF circuits",

abstract = "We describe a microelectromechanical (MEM) relay technology for high-performance reconfigurable RF circuits. This microrelay, fabricated using surface micromachining, is a metal contact relay with electrical isolation between signal and drive lines. This relay provides excellent switching performance over a broad frequency band (insertion loss of 0.1 dB and isolation of 30 dB at 40 GHz), versatility in switch circuit configurations (microstrip and coplanar, shunt and series), and the capability for monolithic integration with high-frequency electronics. In addition, this MEM relay technology has demonstrated yields and lifetimes that are promising for RF circuit implementation.",

keywords = "Broadband, MEM, Reconfigurable, Relay, Reliability",

author = "Mihailovich, {R. E.} and M. Kim and Hacker, {J. B.} and Sovero, {E. A.} and J. Studer and Higgins, {J. A.} and DeNatale, {J. F.}",

year = "2001",

month = feb,

doi = "10.1109/7260.914300",

language = "English",

volume = "11",

pages = "53--55",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - MEM relay for reconfigurable RF circuits

AU - Mihailovich, R. E.

AU - Kim, M.

AU - Hacker, J. B.

AU - Sovero, E. A.

AU - Studer, J.

AU - Higgins, J. A.

AU - DeNatale, J. F.

PY - 2001/2

Y1 - 2001/2

N2 - We describe a microelectromechanical (MEM) relay technology for high-performance reconfigurable RF circuits. This microrelay, fabricated using surface micromachining, is a metal contact relay with electrical isolation between signal and drive lines. This relay provides excellent switching performance over a broad frequency band (insertion loss of 0.1 dB and isolation of 30 dB at 40 GHz), versatility in switch circuit configurations (microstrip and coplanar, shunt and series), and the capability for monolithic integration with high-frequency electronics. In addition, this MEM relay technology has demonstrated yields and lifetimes that are promising for RF circuit implementation.

AB - We describe a microelectromechanical (MEM) relay technology for high-performance reconfigurable RF circuits. This microrelay, fabricated using surface micromachining, is a metal contact relay with electrical isolation between signal and drive lines. This relay provides excellent switching performance over a broad frequency band (insertion loss of 0.1 dB and isolation of 30 dB at 40 GHz), versatility in switch circuit configurations (microstrip and coplanar, shunt and series), and the capability for monolithic integration with high-frequency electronics. In addition, this MEM relay technology has demonstrated yields and lifetimes that are promising for RF circuit implementation.

KW - Broadband

KW - MEM

KW - Reconfigurable

KW - Relay

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=0035254928&partnerID=8YFLogxK

U2 - 10.1109/7260.914300

DO - 10.1109/7260.914300

M3 - Article

AN - SCOPUS:0035254928

SN - 1531-1309

VL - 11

SP - 53

EP - 55

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 2

ER -

MEM relay for reconfigurable RF circuits

Abstract

Keywords

ASJC Scopus subject areas

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