Memory characteristics of doubly stacked nano-floating gate memory devices with channels of single ZnO nanowires

Sungsu Kim, Kyoungah Cho, Kiyeol Kwak, Sangsig Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present in this paper the memory characteristics of doubly stacked nonvolatile nano-floating gate memory (NFGM) devices with channels of single ZnO nanowires. In our doubly stacked NFGM devices, first- and second-stage floating gate layers composed of Al nanoparticles (NPs) are separated with a 3-nm-thick interlayer of Al2O3. The average size of Al NPs created by sputtering is about 7 nm, and the Al NPs are isolated from each other laterally in the same layer as well as vertically in the double layers. When the voltage is swept from 10 to -10 V, the flat-band voltage shifts are about 0.8 and 2.5 V for the singly and doubly stacked MOS capacitors, respectively. The comparison of metal-oxide-semiconductor capacitors embedded with singly and doubly stacked nanoparticle layers reveals that the retention characteristics of the doubly stacked NFGM device are superior to those of a singly stacked NFGM device. Furthermore, the memory characteristics of the doubly stacked NFGM device remain even after 105 programming and erasing cycles.

Original languageEnglish
Pages (from-to)6196-6198
Number of pages3
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number9
DOIs
Publication statusPublished - 2013 Sep

Keywords

  • Al nanoparticle
  • Doubly stacked memory
  • Floating gate memory
  • ZnO nanowire

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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