Memory characteristics of doubly stacked nano-floating gate memory devices with channels of single ZnO nanowires

Sungsu Kim, Kyoungah Cho, Kiyeol Kwak, Sangsig Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We present in this paper the memory characteristics of doubly stacked nonvolatile nano-floating gate memory (NFGM) devices with channels of single ZnO nanowires. In our doubly stacked NFGM devices, first- and second-stage floating gate layers composed of Al nanoparticles (NPs) are separated with a 3-nm-thick interlayer of Al2O3. The average size of Al NPs created by sputtering is about 7 nm, and the Al NPs are isolated from each other laterally in the same layer as well as vertically in the double layers. When the voltage is swept from 10 to -10 V, the flat-band voltage shifts are about 0.8 and 2.5 V for the singly and doubly stacked MOS capacitors, respectively. The comparison of metal-oxide-semiconductor capacitors embedded with singly and doubly stacked nanoparticle layers reveals that the retention characteristics of the doubly stacked NFGM device are superior to those of a singly stacked NFGM device. Furthermore, the memory characteristics of the doubly stacked NFGM device remain even after 105 programming and erasing cycles.

Original languageEnglish
Pages (from-to)6196-6198
Number of pages3
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number9
DOIs
Publication statusPublished - 2013 Sep 1

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Nanowires
floating
nanowires
Nanoparticles
Data storage equipment
Equipment and Supplies
nanoparticles
Semiconductors
capacitors
Oxides
MOS capacitors
Electric potential
electric potential
Metals
programming
Computer programming
metal oxide semiconductors
Sputtering
interlayers
Capacitors

Keywords

  • Al nanoparticle
  • Doubly stacked memory
  • Floating gate memory
  • ZnO nanowire

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Memory characteristics of doubly stacked nano-floating gate memory devices with channels of single ZnO nanowires. / Kim, Sungsu; Cho, Kyoungah; Kwak, Kiyeol; Kim, Sangsig.

In: Journal of Nanoscience and Nanotechnology, Vol. 13, No. 9, 01.09.2013, p. 6196-6198.

Research output: Contribution to journalArticle

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